Quick Search: Journal  Author  Title/Abstract  Vol./Year 

Jpn. J. Appl. Phys. 51 (2012) 04DB02 (6 pages)  |Previous Article| |Next Article|  |Table of Contents|
|Full Text PDF (872K)| |Buy This Article|

Single-Tube Characterization Methodology for Experimental and Analytical Evaluation of Carbon Nanotube Synthesis

Hong-Yu Chen1, Albert Lin1, Luckshitha Suriyasena Liyanage1, Cara Beasley3, Nishant Patil1, Hai Wei1, Subhasish Mitra1,2, and H.-S. Philip Wong1

1Department of Electrical Engineering, Stanford University, Stanford, CA 94305, U.S.A.
2Department of Computer Science, Stanford University, Stanford, CA 94305, U.S.A.
3Department of Chemistry, Stanford University, Stanford, CA 94305, U.S.A.

(Received August 19, 2011; accepted December 19, 2011; published online April 20, 2012)

The existing evaluations of the semiconducting/metallic properties of carbon nanotube (CNT) synthesis do not take into account CNT variation and simply characterize the material with only one parameter psemi: the percentage of semiconducting CNTs. Specifically, this psemi figure of merit does not consider intermediate-on–off-ratio CNTs (semiconducting CNTs with poor Ion/Ioff), and yet, such CNTs can have a large impact on device- and circuit-level performance. Inspired by the complementary metal–oxide–semiconductor (CMOS) community, we address this inadequacy by considering intermediate-on–off-ratio CNTs and other CNT variations by offering a holistic view of CNT characterization through parameter distributions. In this paper, a new methodology, called single-tube characterization (STC), is presented, which directly observes and evaluates the distributions of CNT material properties. Such holistic distributions not only enable more accurate characterization and analyses of the material properties and variations, but they also further enable analyses to accurately predict performance and variation at the device- and circuit-levels.

URL: http://jjap.jsap.jp/link?JJAP/51/04DB02/
DOI: 10.1143/JJAP.51.04DB02


|Full Text PDF (872K)| |Buy This Article| Citation:

References

  1. P. Avouris, J. Appenzeller, R. Martel, and S. J. Wind: Proc. IEEE 91 (2003) 1772.
  2. P. Avouris, Z. Chen, and V. Perebeninos: Nat. Nanotechnol. 2 (2007) 605.
  3. J. Deng, N. Patil, K. Ryu, A. Badmaev, C. Zhou, S. Mitra, and H.-S. P. Wong: ISSCC Tech. Dig., 2007 p. 70.
  4. L. Wei, D. J. Frank, L. Chang, and H.-S. P. Wong: IEDM Tech. Dig., 2009, p. 37.7.1.
  5. H.-S. P. Wong, J. Appenzeller, V. Derycke, R. Martel, S. Wind, and P. Avouris: ISSCC Tech. Dig., 2003, p. 370.
  6. A. Naeemi and J. D. Meindl: IEEE Trans. Electron Devices 54 (2007) 26[CrossRef].
  7. G. F. Close, S. Yasuda, B. Paul, S. Fujita, and H.-S. P. Wong: Nano Lett. 8 (2008) 706[CrossRef].
  8. Z. Chen, J. Appenzeller, Y.-M. Lin, J. Sippel-Oakley, A. G. Rinzler, J. Tang, S. J. Wind, P. M. Solomon, and P. Avouris: Science 311 (2006) 1735[Science].
  9. G. Zhang, P. Qi, X. Wang, Y. Lu, X. Li, R. Tu, S. Bangsaruntip, D. Mann, L. Zhang, and H. Dai: Science 314 (2006) 974[Science].
  10. M. C. LeMieux, M. Roberts, S. Barman, Y. W. Jin, J. M. Kim, and Z. Bao: Science 321 (2008) 101.
  11. M. S. Arnold, A. A. Green, J. F. Hulvat, S. I. Stupp, and M. C. Hersam: Nat. Nanotechnol. 1 (2006) 60.
  12. Y. Li, D. Mann, M. Rolandi, W. Kim, A. Ural, S. Hung, A. Javey, J. Cao, D. Wang, E. Yenilmez, Q. Wang, J. F. Gibbons, Y. Nishi, and H. Dai: Nano Lett. 4 (2004) 317[CrossRef].
  13. L. Ding, A. Tselev, J. Wang, D. Yuan, H. Chu, T. P. McNicholas, Y. Li, and J. Liu: Nano Lett. 9 (2009) 800[CrossRef].
  14. J. Zhang, N. Patil, and S. Mitra: IEEE Trans. Comput.-Aided Des. IC Syst. 28 (2009) 1307.
  15. C. Beasley, A. Lin, H.-Y. Chen, B. M. Clemens, and H.-S. P. Wong: presented at MRS Natl. Meet., 2010, paper 4.2.
  16. K. Bernstein, D. J. Frank, A. E. Gattiker, W. Haensch, B. L. Ji, S. R. Nassif, E. J. Nowak, D. J. Pearson, and N. J. Rohrer: IBM J. Res. Dev. 50 (2006) 433.
  17. J. Zhang, N. Patil, A. Lin, H.-S. P. Wong, and S. Mitra: Design, Automation and Test in Europe Conf. Exhib. (DATE), 2010 p. 6.
  18. N. Patil, A. Lin, E. R. Myers, K. Ryu, A. Badmaev, C. Zhou, H.-S. P. Wong, and S. Mitra: IEEE Trans. Nanotechnol. 8 (2009) 498.
  19. N. Patil, A. Lin, J. Zhang, H. Wei, K. Anderson, H.-S. P. Wong, and S. Mitra: IEDM Tech. Dig., 2009, p. 23.4.1.
  20. H. M. Cheng, F. Li, X. Sun, S. D. M. Brown, M. A. Pimenta, A. Marucci, G. Dresselhaus, and M. S. Dresselhaus: Chem. Phys. Lett. 289 (1998) 602[CrossRef].
  21. A. G. Nasibulin, P. V. Pikhitsa, H. Jiang, and E. I. Kauppinen: Carbon 43 (2005) 2251.
  22. M. Paillet, V. Jourdain, P. Poncharal, J.-L. Sauvajol, A. Zahaba, J. C. Meyer, S. Roth, N. Cordente, C. Amiens, and B. Chaudret: Diamond Relat. Mater. 14 (2005) 1426.
|TOP|  |Previous Article| |Next Article|  |Table of Contents| |JJAP Home|
Copyright © 2013 The Japan Society of Applied Physics
Contact Information