Jpn. J. Appl. Phys. 51 (2012) 04DC08 (6 pages)  |Previous Article| |Next Article|  |Table of Contents|
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Random Interface-Traps-Induced Electrical Characteristic Fluctuation in 16-nm-Gate High-κ/Metal Gate Complementary Metal–Oxide–Semiconductor Device and Inverter Circuit

Yiming Li and Hui-Wen Cheng

(Received September 26, 2011; accepted December 28, 2011; published online April 20, 2012)

This work estimates electrical and transfer-characteristic fluctuations in 16-nm-gate high-κ/metal gate (HKMG) metal–oxide–semiconductor field effect transistor (MOSFET) devices and inverter circuit induced by random interface traps (ITs) at high-κ/silicon interface. Randomly generated devices with two-dimensional (2D) ITs at HfO₂/Si interface are incorporated into quantum-mechanically corrected 3D device simulation. Device characteristics, as influenced by different degrees of fluctuation, are discussed in relation to random ITs near source and drain ends. Owing to a decreasing penetration of electric field from drain to source, the drain induced barrier lowering (DIBL) of the edvice decreases when the number of ITs increases. In contrast to random-dopant fluctuation, the screening effect of device's inversion layer cannot effectively screen potential's variation; thus, devices still have noticeable fluctuation of gate capacitance (C_G) under high gate bias. The cutoff frequency decreases as increasing the number of ITs owing to the decreasing transconductance and increasing C_G. Decreasing on-state current and increasing C_G further result in increasing intrinsic gate delay time (τ) when the number of ITs increases. The fluctuation magnitude of DIBL, cutoff frequency, and τ above is increased as the number of ITs increases. Even for cases with the same number of random ITs, noise margins (NMs) of the 16-nm-gate complementary metal–oxide–semiconductor inverter circuit are still quite different due to the different distribution of random ITs. The NMs of inverter circuit increase as the number of random ITs increases; however, the NMs' fluctuations are increased due to the more sources of fluctuation at HfO₂/Si interface of HKMG devices.

URL: http://jjap.jsap.jp/link?JJAP/51/04DC08/
DOI: 10.1143/JJAP.51.04DC08

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