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Jpn. J. Appl. Phys. 51 (2012) 04DD06 (6 pages)  |Previous Article| |Next Article|  |Table of Contents|
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Improvement of Uniformity of Resistive Switching Parameters by Selecting the Electroformation Polarity in IrOx/TaOx/WOx/W Structure

Amit Prakash1, Siddheswar Maikap1, Chao Sung Lai1, Heng Yuan Lee2, W. S. Chen2, Frederick T. Chen2, Ming Jer Kao2, and Ming Jinn Tsai2

1Thin Film Nano Tech. Lab., Department of Electronic Engineering, Chang Gung University, Kweishan, Taoyuan 333, Taiwan
2Electronic and Opto-Electronic Research Laboratories (EOL), Industrial Technology Research Institute (ITRI), Hsinchu 310, Taiwan

(Received September 26, 2011; accepted February 1, 2012; published online April 20, 2012)

A route to improve the uniformity of key resistive switching memory parameters such as SET/RESET voltages, low/high-resistance states as well as switching cycles is demonstrated in an IrOx/TaOx/WOx/W simple resistive memory stack by selecting the electroformation polarity. The various stack layers are confirmed by high-resolution transmission electron microscopy, energy dispersive X-ray spectroscopy, and X-ray photoelectron spectroscopy analyses. Cumulative probability plots of the key memory parameters show tight distribution. The oxygen vacancy filaments are formed/ruptured owing to polarity-dependent oxygen ion migration, which is the switching mechanism in the TaOx/WOx bilayers, and improved resistive switching parameters under positive formation polarity are observed. The fabricated device has shown good potential for multilevel capability with a low voltage operation of ±3 V. The device has shown an excellent read endurance of >105 cycles and data retention up to 10 years at 85 °C.

URL: http://jjap.jsap.jp/link?JJAP/51/04DD06/
DOI: 10.1143/JJAP.51.04DD06


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References

  1. A. Sawa: Mater. Today 11 [6] (2008) 28.
  2. R. Waser and M. Aono: Nat. Mater. 6 (2007) 833[CrossRef].
  3. H. Akinaga and H. Shima: Proc. IEEE 98 (2010) 2237.
  4. C. H. Ho, C. L. Hsu, C.-C. Chen, J.-T. Liu, C.-S. Wu, C.-C. Huang, C. Hu, and F.-L. Yang: IEDM Tech. Dig., 2010, p. 436.
  5. H. Y. Lee, Y. S. Chen, P. S. Chen, P. Y. Gu, Y. Y. Hsu, S. M. Wang, W. H. Liu, C. H. Tsai, S. S. Sheu, P. C. Chiang, W. P. Lin, C. H. Lin, W. S. Chen, F. T. Chen, C. H. Lien, and M.-J. Tsai: IEDM Tech. Dig., 2010, p. 460.
  6. S. Maikap, S. Z. Rahaman, T. Y. Wu, F. Chen, M.-J. Kao, and M.-J. Tsai: Proc. 39th European Solid-State Device Research Conf. (ESSDERC 2009), 2009, p. 217.
  7. H. Akinaga, H. Shima, F. Takano, I. H. Inoue, and H. Takagi: IEEJ Trans. Electr. Electron. Eng. 2 (2007) 453.
  8. K. Kinoshita, T. Tamura, M. Aoki, Y. Sugiyama, and H. Tanaka: Jpn. J. Appl. Phys. 45 (2006) L991[JSAP].
  9. H. Y. Lee, P. S. Chen, C. C. Wang, S. Maikap, P. J. Tzeng, C. H. Lin, L. S. Lee, and M. J. Tsai: Jpn. J. Appl. Phys. 46 (2007) 2175[JSAP].
  10. H. Y. Lee, Y. S. Chen, P. S. Chen, T. Y. Wu, F. Chen, C. C. Wang, P. J. Tzeng, M.-J. Tsai, and C. Lien: IEEE Electron Device Lett. 31 (2010) 44[CrossRef].
  11. P. S. Chen, H. Y. Lee, Y. S. Chen, F. Chen, and M.-J. Tsai: Jpn. J. Appl. Phys. 49 (2010) 04DD18[JSAP].
  12. J. Y. Son, D. Y. Kim, H. Kim, W. J. Maeng, Y. S. Shin, and Y. H. Shin: Electrochem. Solid-State Lett. 14 (2011) H311.
  13. E.-K. Lai, W.-C. Chien, Y.-C. Chen, T.-J. Hong, Y.-Y. Lin, K.-P. Chang, Y.-D. Yao, P. Lin, S.-F. Horng, J. Gong, S.-C. Tsai, C.-H. Lee, S.-H. Hsieh, C.-F. Chen, Y.-H. Shih, K.-Y. Hsieh, R. Liu, and C.-Y. Lu: Jpn. J. Appl. Phys. 49 (2010) 04DD17[JSAP].
  14. W. C. Chien, Y. C. Chen, E. K. Lai, Y. D. Yao, P. Lin, S. F. Horng, J. Gong, T. H. Chou, H. M. Lin, M. N. Chang, Y. H. Shih, K. Y. Hsieh, R. Liu, and C.-Y. Lu: IEEE Electron Device Lett. 31 (2010) 126[CrossRef].
  15. W. C. Chien, F. M. Lee, Y. Y. Lin, Y. C. Chen, M. H. Lee, H. L. Lung, K. Y. Hsieh, and C. Y. Lu: Ext. Abstr. Int. Conf. Solid State Devices and Materials, 2011, p. 1003.
  16. B. Sun, L. Liu, N. Xu, B. Gao, Y. Wang, D. Han, X. Liu, R. Han, and J. Kang: Jpn. J. Appl. Phys. 48 (2009) 04C061[JSAP].
  17. Y. Li, S. Long, H. Lv, Q. Liu, Y. Wang, S. Zhang, W. Lian, M. Wang, K. Zhang, H. Xie, S. Liu, and M. Liu: Nanotechnology 22 (2011) 254028[IoP STACKS].
  18. S.-Y. Wang, D.-Y. Lee, T.-Y. Tseng, and C.-Y. Lin: Appl. Phys. Lett. 95 (2009) 112904[AIP Scitation].
  19. H. Kishi, A. A. A. Sarhan, M. Sakaue, S. M. Aspera, M. Y. David, H. Nakanishi, H. Kasai, Y. Tamai, S. Ohnishi, and N. Awaya: Jpn. J. Appl. Phys. 50 (2011) 071101[JSAP].
  20. H. Shima, F. Takano, Y. Tamai, H. Akinaga, and I. H. Inoue: Jpn. J. Appl. Phys. 46 (2007) L57[JSAP].
  21. W. Y. Park, G. H. Kim, J. Y. Seok, K. M. Kim, S. J. Song, M. H. Lee, and C. S. Hwang: Nanotechnology 21 (2010) 195201[IoP STACKS].
  22. C. Rohde, B. J. Choi, D. S. Jeong, S. Choi, J.-S. Zhao, and C. S. Hwang: Appl. Phys. Lett. 86 (2005) 262907[AIP Scitation].
  23. B. J. Choi, D. S. Jeong, S. K. Kim, C. Rohde, S. Choi, J. H. Oh, H. J. Kim, C. S. Hwang, K. Szot, R. Waser, B. Reichenberg, and S. Tiedke: J. Appl. Phys. 98 (2005) 033715[AIP Scitation].
  24. S. Jung, J. Kong, S. Song, K. Lee, T. Lee, H. Hwang, and S. Jeon: J. Electrochem. Soc. 157 (2010) H1042.
  25. K. Fujiwara, T. Nemoto, M. J. Rozenberg, Y. Nakamura, and H. Takagi: Jpn. J. Appl. Phys. 47 (2008) 6266[JSAP].
  26. A. Chen, S. Haddad, Y. C. Wu, T. N. Fang, S. Kaza, and Z. Lan: Appl. Phys. Lett. 92 (2008) 013503[AIP Scitation].
  27. Y. Sakotsubo, M. Terai, S. Kotsuji, T. Sakamoto, and M. Hada: Jpn. J. Appl. Phys. 49 (2010) 04DD19[JSAP].
  28. Z. Wei, Y. Kanzawa, K. Arita, Y. Katoh, K. Kawai, S. Muraoka, S. Mitani, S. Fujii, K. Katayama, M. Iijima, T. Mikawa, T. Ninomiya, R. Miyanaga, Y. Kawashima, K. Tsuji, A. Himeno, T. Okada, R. Azuma, K. Shimakawa, H. Sugaya, T. Takagi, R. Yasuhara, K. Horiba, H. Kumigashira, and M. Oshima: IEDM Tech. Dig., 2008, p. 293.
  29. J. J. Yang, M.-X. Zhang, J. P. Strachan, F. Miao, M. D. Pickett, R. D. Kelley, G. Medeiros-Ribeiro, and R. S. Williams: Appl. Phys. Lett. 97 (2010) 232102[AIP Scitation].
  30. A. Prakash, S. Maikap, H. Y. Lee, G. Chen, F. Chen, M.-J. Tsai, and M.-J. Kao: Adv. Mater. Res. 159 (2011) 333.
  31. L. Zhang, R. Huang, M. Zhu, S. Qin, Y. Kuang, D. Gao, C. Shi, and Y. Wang: IEEE Electron Device Lett. 31 (2010) 966[CrossRef].
  32. H. Kondo, M. Arita, T. Fujii, H. Kaji, M. Moniwa, T. Yamaguchi, I. Fujiwara, M. Yoshimaru, and Y. Takahashi: Jpn. J. Appl. Phys. 50 (2011) 081101[JSAP].
  33. H. Sim, D. Choi, D. Lee, S. Seo, M. J. Lee, I. K. Yoo, and H. Hwang: IEEE Electron Device Lett. 26 (2005) 292[CrossRef].
  34. C.-Y. Lin, C.-Y. Wu, C.-Y. Wu, C. Hu, and T.-Y. Tseng: J. Electrochem. Soc. 154 (2007) G189.
  35. W. Banerjee, S. Z. Rahaman, A. Prakash, and S. Maikap: Jpn. J. Appl. Phys. 50 (2011) 10PH01[JSAP].
  36. Y. Wu, B. Lee, and H.-S. Philip Wong: IEEE Electron Device Lett. 31 (2010) 1449[CrossRef].
  37. J. Park, K. P. Biju, S. Jung, W. Lee, J. Lee, S. Kim, S. Park, J. Shin, and H. Hwang: IEEE Electron Device Lett. 32 (2011) 476[CrossRef].
  38. W. Banerjee, S. Maikap, S. Z. Rahaman, A. Prakash, T.-C. Tien, W.-C. Li, and J.-R. Yang: J. Electrochem. Soc. 159 (2012) H177.
  39. W. Banerjee, S. maikap, T.-C. Tien, W.-C. Li, and J.-R. Yang: J. Appl. Phys. 110 (2011) 074309[AIP Scitation].
  40. Q. Liu, S. Long, W. Wang, Q. Zuo, S. Zhang, J. Chen, and M. Liu: IEEE Electron Device Lett. 30 (2009) 1335[CrossRef].
  41. S. Yu, B. Gao, H. Dai, B. Sun, L. Liu, X. Liu, R. Han, J. Kang, and B. Yu: Electrochem. Solid-State Lett. 13 (2010) H36.
  42. E. Atanassova, T. Dimitrova, and J. Koprinarova: Appl. Surf. Sci. 84 (1995) 193[CrossRef].
  43. Y. Imai, A. Watanabe, M. Mukaida, K. Osato, T. Tsunoda, T. Kameyama, and K. Fukuda: Thin Solid Films 261 (1995) 76[CrossRef].
  44. T. Takei: Mater. Lett. 13 (1992) 56.
  45. D. S. Shang, Q. Wang, L. D. Chen, R. Dong, X. M. Li, and W. Q. Zhang: Phys. Rev. B 73 (2006) 245427[APS].
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