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Jpn. J. Appl. Phys. 51 (2012) 04DD07 (6 pages)  |Previous Article| |Next Article|  |Table of Contents|
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Reset Current Reduction with Excellent Filament Controllability by Using Area Minimized and Field Enhanced Unipolar Resistive Random Access Memory Structure

Kyung-Chang Ryoo1,2, Jeong-Hoon Oh1,2, Sunghun Jung1, Hongsik Jeong2, and Byung-Gook Park1

1Inter-University Semiconductor Research Center and School of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-742, Republic of Korea
2DRAM Process Architecture Team, Memory Division, Semiconductor Business, Samsung Electronics Co., Ltd., Yongin, Gyeonggi 445-701, Republic of Korea

(Received September 25, 2011; revised December 22, 2011; accepted January 18, 2012; published online April 20, 2012)

We firstly propose a novel resistive random access memory (RRAM) cell structure, which makes it possible to minimize the switching area and to maximize the electrical field where resistive switching occurs, resulting in the improvement of resistive switching characteristics. With excellent structural advantages, resistive switching characteristics such as reset current and set voltage fluctuation are improved through the enhancement of conductive filament (CF) controllability. A simple fabrication process is delivered and the device performance from the viewpoints of the forming voltage, set voltage, and reset current is investigated. Conducting defect effects are also investigated in comparison with the conventional RRAM cell structure. Numerical simulation is performed using a random circuit breaker (RCB) model to confirm the proposed structure.

URL: http://jjap.jsap.jp/link?JJAP/51/04DD07/
DOI: 10.1143/JJAP.51.04DD07


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