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Jpn. J. Appl. Phys. 51 (2012) 04DD10 (6 pages)  |Previous Article| |Next Article|  |Table of Contents|
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Excellent Uniformity and Multilevel Operation in Formation-Free Low Power Resistive Switching Memory Using IrOx/AlOx/W Cross-Point

Writam Banerjee, Sk. Ziaur Rahaman, and Siddheswar Maikap

Thin Film Nano Technology Laboratory, Department of Electronic Engineering, Chang Gung University, Kweishan, Taoyuan 333, Taiwan

(Received September 26, 2011; accepted December 12, 2011; published online April 20, 2012)

Excellent uniformity and multilevel operation in formation-free low-power resistive switching memory fabricated using the IrOx/AlOx/W cross-point structure have been investigated. The thickness of the deposited films has been measured by high-resolution transmission electron microscopy with energy dispersive X-ray spectroscopy for each layer. The cross-point resistive switching memory devices have a tight distribution of SET/RESET voltages and low/high-resistance states as well as switching cycles. A high resistance ratio of >8×102 is obtained. This memory device shows excellent AC endurance of >5×103 cycles, read endurance of >1×105 cycles, and 10-year-data retention at 85 °C at a low power of 55 µW and low-current compliances of 50–200 µA. This study is not only important for cross-point memories but will also help in the design of high-density nanoscale nonvolatile memories in the future.

URL: http://jjap.jsap.jp/link?JJAP/51/04DD10/
DOI: 10.1143/JJAP.51.04DD10


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