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Jpn. J. Appl. Phys. 51 (2012) 04DD14 (5 pages)  |Previous Article| |Next Article|  |Table of Contents|
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Areal and Structural Effects on Oxide-Based Resistive Random Access Memory Cell for Improving Resistive Switching Characteristics

Kyung-Chang Ryoo1,2, Jeong-Hoon Oh1,2, Sunghun Jung1, Hongsik Jeong2, and Byung-Gook Park1

1Inter-University Semiconductor Research Center and School of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-742, Republic of Korea
2DRAM Process Architecture Team, Memory Division, Semiconductor Business, Samsung Electronics Co., Ltd., Yongin, Gyeonggi 445-701, Republic of Korea

(Received September 25, 2011; revised November 27, 2011; accepted January 11, 2012; published online April 20, 2012)

A new technical improvement in understanding the resistive switching characteristics of unipolar resistive random access memory (RRAM) is investigated. It is possible to minimize reset current (IRESET), set voltage variation, and forming voltage (VFORMING), which results in a wide sensing margin and high density applications by using a conducting filament (CF) minimized structure up to a 10 nm technology node. Its structural advantages enable IRESET to be tuned with excellent manufacturability. Numerical simulation is also performed using a random circuit breaker (RCB) model, showing that the proposed structure elucidates the resistive switching improvement.

URL: http://jjap.jsap.jp/link?JJAP/51/04DD14/
DOI: 10.1143/JJAP.51.04DD14


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