Jpn. J. Appl. Phys. 51 (2012) 04DE11 (7 pages)  |Previous Article| |Next Article|  |Table of Contents|
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A Wide-Range Tunable Level-Keeper Using Vertical Metal–Oxide–Semiconductor Field-Effect Transistors for Current-Reuse Systems

Satoru Tanoi^1,2 and Tetsuo Endoh^1,2

(Received September 26, 2011; revised December 18, 2011; accepted December 26, 2011; published online April 20, 2012)

A wide-range tunable level-keeper using vertical metal–oxide–semiconductor field-effect transistors (MOSFETs) is proposed for current-reuse analog systems. The design keys for widening tunable range of the operation are a two-path feed-back and a vertical MOSFET with back-bias-effect free. The proposed circuit with the vertical MOSFETs shows the 1.23-V tunable-range of the input level with the 2.4-V internal-supply voltage (V_DD) in the simulation. This tunable-range of the proposed circuit is 4.7 times wider than that of the conventional. The achieved current efficiency of the proposed level-keeper is 66% at the 1.2-V output with the 2.4-V V_DD. This efficiency of the proposed circuit is twice higher than that of the traditional voltage down converter.

URL: http://jjap.jsap.jp/link?JJAP/51/04DE11/
DOI: 10.1143/JJAP.51.04DE11

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