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Schottky Source/Drain InAlN/GaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistor with High Breakdown Voltage and Low On-Resistance
Qi Zhou,
Hongwei Chen,
Chunhua Zhou,
Zhihong Feng1,
Shujun Cai1, and
Kevin J. Chen
Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
1Science and Technology on ASIC Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang, 050051, China
(Received September 26, 2011; revised November 8, 2011; accepted December 1, 2011; published online April 20, 2012)
In this work, we present a novel device technology of using Schottky source/drain (SSD) in InAlN/GaN metal–insulator–semiconductor high-electron-mobility transistors (MISHEMTs) for off-state breakdown voltage VBD improvement. The Schottky source/drain design can effectively prevent the source carrier injection compared to the conventional MISHEMTs, leading to enhanced VBD in the SSD MISHEMTs. A VBD of 460 V is obtained in an InAlN/GaN SSD MISHEMTs with low specific Ron of 2.27 mΩ·cm2, at a 170% VBD improvement compared to conventional MISHEMTs. Despite the Schottky source/drain used, a SSD MISHEMT with a gate length of 1 µm exhibits respectable drain current density of 416 mA/mm and transconductance of 113 mS/mm.
URL:
http://jjap.jsap.jp/link?JJAP/51/04DF02/
DOI: 10.1143/JJAP.51.04DF02
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