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Jpn. J. Appl. Phys. 51 (2012) 04DF03 (4 pages)  |Previous Article| |Next Article|  |Table of Contents|
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High Integrity SiO2 Gate Insulator Formed by Microwave-Excited Plasma Enhanced Chemical Vapor Deposition for AlGaN/GaN Hybrid Metal–Oxide–Semiconductor Heterojunction Field-Effect Transistor on Si Substrate

Hiroshi Kambayashi1,3, Takehiko Nomura1, Sadahiro Kato1, Hirokazu Ueda2, Akinobu Teramoto3, Shigetoshi Sugawa3,4, and Tadahiro Ohmi3

1Advanced Power Device Research Association, Yokohama 220-0073, Japan
2Tokyo Electron Technology Development Institute Inc., Sendai 981-3137, Japan
3New Industry Creation Hatchery Center, Tohoku University, Sendai 980-8579, Japan
4Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan

(Received September 25, 2011; accepted January 26, 2012; published online April 20, 2012)

High quality SiO2 gate insulator has been demonstrated for GaN metal–oxide–semiconductor (MOS) transistor which has high performance with normally-off operation. The SiO2 films formed on GaN by microwave-excited plasma enhanced chemical vapor deposition (MW-PECVD) and annealed after deposition exhibits a low-interface state density between SiO2 and GaN, a high-breakdown field, and a high charge-to-breakdown. The SiO2 films have been also applied to the gate insulator of AlGaN/GaN hybrid MOS heterojunction field-effect transistor (HFET) on Si substrate. The MOS-HFET show excellent properties with the threshold voltage of 4.2 V and the maximum field-effect mobility of 161 cm2 V-1 s-1.

URL: http://jjap.jsap.jp/link?JJAP/51/04DF03/
DOI: 10.1143/JJAP.51.04DF03


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