Jpn. J. Appl. Phys. 51 (2012) 04DG01 (6 pages)  |Previous Article| |Next Article|  |Table of Contents|
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Impact of Data Transmission over 10 Gbps on High-Density and Low-Cost Optoelectronic Module with Polynorbornene Waveguides

Yuka Ito, Shinsuke Terada, Shinya Arai, Makoto Fujiwara, Tetsuya Mori, Koji Choki, Takafumi Fukushima¹, and Mitsumasa Koyanagi¹

(Received September 27, 2011; revised November 25, 2011; accepted December 16, 2011; published online April 20, 2012)

We proposed a rigid/flex optoelectronic (O/E) module with 48-channel polymeric waveguides for short-distance board-level optical interconnection. A flexible O/E test module was fabricated in the following two steps by using standard packaging processes. First, two vertical cavity surface emitting laser diodes (VCSELs) and one VCSEL driver (VD) were flip-chip bonded to a completed flexible printed circuit board (PCB), and two photodiodes (PDs) and one transimpedance amplifier/limiting amplifier (TIA/LA) to another flexible PCB. Second, the two flexible PCBs were attached with a polynorbornene (PNB) sheet in which high-density PNB waveguides were formed by UV exposure. Active areas of VCSELs and PDs on the flexible PCBs were aligned to micromirrors of the waveguides with -6 µm offset toward the signal propagation direction. We successfully demonstrated data transmission over 10 Gbps and low inter-channel crosstalk of less than -20 dB was achieved in the flexible O/E test module with 120-mm-long and 62.5-µm-pitch waveguides.

URL: http://jjap.jsap.jp/link?JJAP/51/04DG01/
DOI: 10.1143/JJAP.51.04DG01

References

1. A. F. Benner, M. Ignatowski, J. A. Kash, D. M. Kuchta, and M. B. Ritter: IBM J. Res. Dev. 49 (2005) 755.
2. L. Schares, J. A. Kash, F. E. Doany, C. L. Schow, C. Schuster, D. M. Kuchta, P. K. Pepeljugoski, J. M. Trewhella, C. W. Baks, R. A. John, L. Shan, Y. H. Kwark, R. A. Budd, P. Chiniwalla, F. R. Libsch, J. Rosner, C. K. Tsang, C. S. Patel, J. D. Schaub, R. Dangel, F. Horst, B. J. Offrein, D. Kucharski, D. Guckenberger, S. Hegde, H. Nyikal, C.-K. Lin, A. Tandon, G. R. Trott, M. Nystrom, D. P. Bour, M. R. T. Tan, and D. W. Dolfi: IEEE J. Sel. Top. Quantum Electron. 12 (2006) 1032.
3. D. A. B. Miller: Proc. IEEE 97 (2009) 1166.
4. J. A. Davis, R. Venkatesan, A. Kaloyeros, M. Beylansky, S. J. Souri, K. Banerjee, K. C. Saraswat, A. Rahman, R. Reif, and J. D. Meindl: Proc. IEEE 89 (2001) 305.
5. J. D. Meindl: IEEE Micro 23 [3] (2003) 28.
6. D. A. B. Miller and H. M. Ozaktas: J. Parallel Distrib. Comput. 41 (1997) 42.
7. K. C. Saraswat and F. Mohammadi: IEEE Trans. Electron Devices 29 (1982) 645[CrossRef].
8. M. Haurylau, C. Q. Chen, H. Chen, J. D. Zhang, N. A. Nelson, D. H. Albonesi, E. G. Friedman, and P. M. Fauchet: IEEE J. Sel. Top. Quantum Electron. 12 (2006) 1699.
9. D. A. B. Miller: Int. J. Optoelectron. 11 (1997) 155.
10. D. A. B. Miller: Proc. IEEE 88 (2000) 728.
11. F. E. Doany, C. L. Schow, B. G. Lee, R. Budd, C. Baks, R. Dangel, R. John, F. Libsch, and J. A. Kash: Proc. 61th Electron Components Technology Conf. (ECTC), 2011, p. 790.
12. P. V. Ramana, H. Kureveettil, B. L. S. Pong, K. Suzuki, T. Shioda, T. C. Wei, J. Chandrappan, L. T. Guan, C. T. W. Liang, C. Y. Yoon, Y. G. Jie, C. Sharmani, and J. H. Lau: Proc. 58th Electron Components Technology Conf. (ECTC), 2008, p. 244.
13. M. Karppinen, T. Alajoki, A. Tanskanen, K. Kataja, J.-T. Mäkinen, K. Kautio, P. Karioja, M. Immonen, and J. Kivilahti: Proc. 56th Electron Components Technology Conf. (ECTC), 2006, p. 799.
14. K. Nieweglowski and K.-J. Wolter: Proc. 2nd Electronics Systemintegration Technology Conf. (ESTC), 2008, p. 607.
15. X. Wang, W. Jiang, L. Wang, H. Bi, and R. T. Chen: J. Lightwave Technol. 26 (2008) 243.
16. D. Krabe, F. Ebling, N. Arndt-Staufenbiel, G. Lang, and W. Scheel: Proc. 50th Electron Components Technology Conf. (ECTC), 2000, p. 970.
17. T. Shishikura, Y. Matsuoka, T. Ban, T. Shibata, and A. Takahashi: Proc. 57th Electron Components Technology Conf. (ECTC), 2007, p. 1275.
18. T. Matsubara, K. Oda, K. Ban, T. Watanabe, K. Tanaka, M. Maetani, Y. Nishihara, and S. Tanahashi: Proc. 56th Electron Components Technology Conf. (ECTC), 2006, p. 789.
19. T. Shibata and A. Takahashi: Proc. 58th Electron Components Technology Conf. (ECTC), 2008, p. 261.
20. M. Fujiwara, Y. Shirato, H. Owari, K. Watanabe, M. Matsuyama, K. Takahama, T. Mori, K. Miyao, K. Choki, T. Fukushima, T. Tanaka, and M. Koyanagi: Jpn. J. Appl. Phys. 46 (2007) 2395[JSAP].
21. T. Mori, K. Takahama, M. Fujiwara, K. Watanabe, H. Owari, Y. Shirato, S. Terada, M. Sakamoto, and K. Choki: Proc. SPIE 7607 (2010) 76070S[AIP Scitation].
22. Y. Takeyoshi and T. Ishigure: J. Lightwave Technol. 27 (2009) 2852.
23. T. Ishigure, R. Ishiguro, H. Uno, and H. Hsu: Proc. 61st Electron Components Technology Conf. (ECTC), 2011, p. 1847.