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Jpn. J. Appl. Phys. 51 (2012) 04DG02 (3 pages)  |Previous Article| |Next Article|  |Table of Contents|
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Large Area of Ultraviolet GaN-Based Photonic Quasicrystal Laser

Cheng-Chang Chen1, Ching-Hsueh Chiu1, Po-Min Tu1, Ming-Yen Kuo2, M. H. Shih1,2, Ji-Kai Huang1, Hao-Chung Kuo1, Hsiao-Wen Zan1, and Chun-Yen Chang3

1Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C.
2Research Center for Applied Sciences (RCAS), Academia Sinica, Nankang, Taipei 115, Taiwan, R.O.C.
3Department of Electronics Engineering National Chiao Tung University, Hsinchu 30010, Taiwan, R.O.C.

(Received September 26, 2011; accepted January 26, 2012; published online April 20, 2012)

In this study, large-area GaN-based photonic quasicrystal (PQC) nanopillars were fabricated on an n-GaN substrate using the nanoimprint lithography (NIL) technique. Under optical pumping condition, a high lasing action from the GaN photonic quasicrystals was observed. The lasing wavelength is at 366 nm with a low threshold power density of 0.009 kW/cm2. To confirm the band-edge lasing mode, the finite-element method (FEM) was used to perform the simulation for the 12-fold symmetry photonic quasicrystal lattices.

URL: http://jjap.jsap.jp/link?JJAP/51/04DG02/
DOI: 10.1143/JJAP.51.04DG02


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