Jpn. J. Appl. Phys. 51 (2012) 04DG06 (4 pages)  |Previous Article| |Next Article|  |Table of Contents|
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GaAs/AlAs Multilayer Cavity with Er-Doped InAs Quantum Dots Embedded in Strain-Relaxed InGaAs Barriers for Ultrafast All-Optical Switches

Hyuga Ueyama¹, Tomoya Takahashi¹, Yoshinori Nakagawa^1,2, Ken Morita¹, Takahiro Kitada¹, and Toshiro Isu¹

(Received September 26, 2011; revised November 16, 2011; accepted December 1, 2011; published online April 20, 2012)

Er-doped InAs quantum dots (QDs) embedded in strain-relaxed InGaAs barriers, which exhibit an extremely short carrier decay time of 3 ps due to the nonradiative process, are superior materials for ultrafast all-optical switches using a GaAs/AlAs multilayer cavity. The intensity of the nonlinear signal due to the absorption saturation in the 20-layer stack of the Er-doped QDs was increased by increasing the In composition in the strain-relaxed InGaAs barriers while keeping the extremely short decay time. The QD cavity structure, which consisted of GaAs/AlAs distributed Bragg reflector (DBR) multilayers and a half-wavelength cavity layer containing two layers of the Er-doped QDs was grown by molecular beam epitaxy. The transmission change signal was clearly observed in the time-resolved measurements at the cavity mode wavelength of 1.55 µm. The response time of 4 ps was observed for the Er-doped QD cavity, which was much shorter than that (12 ps) for the undoped QD cavity.

URL: http://jjap.jsap.jp/link?JJAP/51/04DG06/
DOI: 10.1143/JJAP.51.04DG06

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