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Jpn. J. Appl. Phys. 51 (2012) 04DG11 (6 pages)  |Previous Article| |Next Article|  |Table of Contents|
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Light Output Enhancement of GaN-Based Light-Emitting Diodes by Optimizing SiO2 Nanorod-Array Depth Patterned Sapphire Substrate

Ching-Hsueh Chiu, Po-Min Tu, Shih-Pang Chang, Chien-Chung Lin1, Chung-Ying Jang, Zhen-Yu Li, Hung-Chih Yang2, Hsiao-Wen Zan, Hao-Chung Kuo, Tien-Chang Lu, Shing-Chung Wang, and Chun-Yen Chang3

Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan
1Institute of Photonic System, College of Photonics, National Chiao-Tung University, Guiren Township, Tainan County 71150, Taiwan
2R&D Division, Epistar Co., Ltd., Science-based Industrial Park, Hsinchu 31040, Taiwan
3Department of Electronics Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan

(Received September 26, 2011; accepted January 30, 2012; published online April 20, 2012)

In this study, we investigated high-efficiency InGaN/GaN light-emitting diodes (LEDs) grown on sapphire substrates with SiO2 nanorod arrays (NRAs) of different heights. The GaN film showed an improved crystal quality through X-ray diffraction (XRD) full-width at half-maximum (FWHM), photoluminescence (PL), and cathodoluminescence (CL) measurements. The light output power and internal quantum efficiency (IQE) of the fabricated LEDs were increased when compared with those of conventional LEDs. Transmission electron microscopy (TEM) images suggested that the voids between SiO2 nanorods and the stacking faults introduced during the nanoscale epitaxial lateral overgrowth (NELOG) of GaN can effectively reduce the threading dislocation density (TDD). We believe that the improvements could be attributed to both the enhanced light extraction by utilizing SiO2 NRAs and the improved crystal quality through the NELOG method. We found that the sample with SiO2 NRA structures of 200 nm height can increase the LED output power by more than 70% in our study.

URL: http://jjap.jsap.jp/link?JJAP/51/04DG11/
DOI: 10.1143/JJAP.51.04DG11


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References

  1. Y. Narukawa, I. Niki, K. Izuno, M. Yamada, Y. Murazki, and T. Mukai: Jpn. J. Appl. Phys. 41 (2002) L371[JSAP].
  2. X. H. Wu, L. M. Brown, D. Kapolnek, S. Keller, B. Keller, S. P. DenBaars, and J. S. Speck: J. Appl. Phys. 80 (1996) 3228[AIP Scitation].
  3. X. H. Wu, D. Kapolnek, E. J. Tarsa, B. Heying, S. Keller, B. P. Keller, U. K. Mishra, S. P. DenBaars, and J. S. Speck: Appl. Phys. Lett. 68 (1996) 1371[AIP Scitation].
  4. C.-H. Chiu, P.-M. Tu, C.-C. Lin, D.-W. Lin, Z.-Y. Li, K.-L. Chuang, J.-R. Chang, T.-C. Lu, H.-W. Zan, C.-Y. Chen, H.-C. Kuo, S.-C. Wang, C.-Y. Chang, C.-H. Chiu, P.-M. Tu, D.-W. Lin, Z.-Y. Li, T.-C. Lu, H.-W. Zan, H.-C. Kuo, and S.-C. Wang: IEEE J. Sel. Top. Quantum Electron. 17 (2011) 971.
  5. D. Kapolnek, S. Keller, R. Vetury, R. D. Underwood, P. Kozodoy, S. P. DenBaars, and U. K. Mishra: Appl. Phys. Lett. 71 (1997) 1204[AIP Scitation].
  6. D. M. Follstaedt, P. P. Provencio, N. A. Missert, C. C. Mitchell, D. D. Koleske, A. A. Allerma, and C. I. H. Ashby: Appl. Phys. Lett. 81 (2002) 2758[AIP Scitation].
  7. A. Sakai, H. Sunakawa, and A. Usui: Appl. Phys. Lett. 71 (1997) 2259[AIP Scitation].
  8. T. S. Zheleva, O. H. Nam, M. D. Bremser, and R. F. Davis: Appl. Phys. Lett. 71 (1997) 2472[AIP Scitation].
  9. D. S. Wuu, W. K. Wang, K. S. Wen, S. C. Huang, S. H. Lin, S. Y. Huang, C. F. Lin, and R. H. Horng: Appl. Phys. Lett. 89 (2006) 161105[AIP Scitation].
  10. Y. J. Lee, J. M. Hwang, T. C. Hsu, M. H. Hsieh, M. J. Jou, B. J. Lee, T. C. Lu, H. C. Kuo, and S. C. Wang: IEEE Photonics Technol. Lett. 18 (2006) 1152[CrossRef].
  11. Z. H. Feng, Y. D. Qi, Z. D. Lu, and K. M. Lau: J. Cryst. Growth 272 (2004) 327[CrossRef].
  12. T. V. Cuong, H. S. Cheong, H. G. Kim, H. Y. Kim, C.-H. Hong, E. K. Suh, H. K. Cho, and B. H. Kong: Appl. Phys. Lett. 90 (2007) 131107[AIP Scitation].
  13. H. Gao, F. Yan, Y. Zhang, J. Li, Y. Zeng, and G. Wang: J. Appl. Phys. 103 (2008) 014314[AIP Scitation].
  14. D. S. Wuu, W. K. Wang, K. S. Wen, S. C. Huang, S. H. Lin, R. H. Horng, Y. S. Yu, and M. H. Pan: J. Electrochem. Soc. 153 (2006) G765.
  15. S. Nagahama, N. Iwasa, M. Senoh, T. Matsusgita, Y. Sugimoto, H. Kiyoku, T. Kozaki, M. Sano, H. Matsumura, H. Umemoto, K. Chocho, and T. Mukai: Jpn. J. Appl. Phys. 39 (2000) L647[JSAP].
  16. C. H. Chiu, Z. Yu. Li, C. L. Chao, M. H. Lo, H. C. Kuo, P. C. Yu, T. C. Lu, S. C. Wang, K. M. Lau, and S. J. Cheng: J. Cryst. Growth 310 (2008) 5170[CrossRef].
  17. T.-Y. Tang, C.-H. Lin, Y.-S. Chen, W.-Y. Shiao, W.-M. Chang, C.-H. Liao, K.-C. Shen, and C.-C. Yang: IEEE Trans. Electron Devices 57 (2010) 71[CrossRef].
  18. C. H. Kuo, L. C. Chang, C. W. Kuo, and G. C. Chi: IEEE Photonics Technol. Lett. 22 (2010) 257[CrossRef].
  19. H. Heinke, V. Kirchner, S. Einfeldt, and D. Hommel: Appl. Phys. Lett. 77 (2000) 2145[AIP Scitation].
  20. C. H. Chiu, D. W. Lin, Z. Y. Li, C. H. Chiu, C. L. Chao, C. C. Tu, H. C. Kuo, T. C. Lu, and S. C. Wang: Jpn. J. Appl. Phys. 49 (2010) 105501[JSAP].
  21. S. J. Rosner, E. C. Carr, M. J. Ludowise, G. Girolami, and H. I. Erikson: Appl. Phys. Lett. 70 (1997) 420[AIP Scitation].
  22. E. J. Miller, E. T. Yu, P. Waltereit, and J. S. Speck: Appl. Phys. Lett. 84 (2004) 535[AIP Scitation].
  23. E. G. Brazel, M. A. Chin, and V. Narayanamurti: Appl. Phys. Lett. 74 (1999) 2367[AIP Scitation].
  24. S. F. Chichibu, A. C. Abare, M. P. Minsky, T. Deguchi, D. Cohen, P. Kozodoy, S. B. Fleischer, S. Keller, J. E. Bowers, E. Hu, U. K. Mishra, L. A. Coldren, S. P. DenBaars, K. Wada, T. Sota, and S. Nakamura: Mater. Sci. Eng. B 59 (1999) 298.
  25. K. Tadatomo, H. Okagawa, Y. Ohuchi, T. Tsunekawa, Y. Imada, M. Kato, and T. Taguchi: Jpn. J. Appl. Phys. 40 (2001) L583[JSAP].
  26. S. Watanabe, N. Yamada, M. Nagashima, Y. Ueki, C. Sasaki, Y. Tamada, T. Taguchi, and H. Kudo: Appl. Phys. Lett. 83 (2003) 4906[AIP Scitation].
  27. Y. J. Lee, C. H. Chiu, C. C. Ke, P. C. Lin, T. C. Lu, H. C. Kuo, and S.-C. Wang: IEEE J. Sel. Top. Quantum Electron. 15 (2009) 1137.
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