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Jpn. J. Appl. Phys. 51 (2012) 04DG15 (4 pages)  |Previous Article| |Next Article|  |Table of Contents|
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GaN-Based Metal–Insulator–Semiconductor Ultraviolet Photodetectors with CsF Current-Suppressing Layer

Chin-Hsiang Chen, Chia-Ming Tsai, Chung-Fu Cheng, Shuo-Fu Yen, Peng-Yin Su, Yu-Hsuan Tsai, and Cheng-Nan Tsai

Department of Electronic Engineering, Cheng Shiu University, Kaohsiung 830, Taiwan, R.O.C.

(Received September 26, 2011; accepted January 6, 2012; published online April 20, 2012)

GaN metal–insulator–semiconductor (MIS) ultraviolet (UV) photodetectors (PDs) with the CsF current-suppressing layer were, for the first time, fabricated and characterized successfully. It was found that we can achieve a low dark current and large photocurrent-to-dark-current contrast ratio from the proposed devices with the use of the CsF current-suppressing layer. With a 5 V applied bias, it was found that the leakage current of the fabricated MIS PDs with the CsF current-suppressing layer was 7.1×10-10 A. This small leakage current should be attributed to the large barrier height caused by the insertion of the CsF current-suppressing layer. With a 5 V applied bias, the barrier height of ΦB = 0.942 can be calculated from the dark current–voltage (I–V) characteristics. We can also achieve a large UV-to-visible rejection ratio from the PDs with the CsF current-suppressing layer.

URL: http://jjap.jsap.jp/link?JJAP/51/04DG15/
DOI: 10.1143/JJAP.51.04DG15


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References

  1. H. Morkoe, S. Strite, G. B. Gao, M. E. Lin, B. Sverdlov, and M. Burns: J. Appl. Phys. 76 (1994) 1363[AIP Scitation].
  2. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimuto, T. Kozaki, H. Umemoto, M. Sano, and K. Chocho: Appl. Phys. Lett. 72 (1998) 211[AIP Scitation].
  3. E. F. Schubert and J. K. Kim: Science 308 (2005) 1274[Science].
  4. Y. K. Su, S. J. Chang, Y. D. Jhou, S. L. Wu, and C. H. Liu: IEEE Sens. J. 8 (2008) 1693.
  5. R. H. Horng, D. S. Wu, Y. C. Lien, and W. H. Lan: Appl. Phys. Lett. 79 (2001) 2925[AIP Scitation].
  6. E. Monroy, T. Palacios, O. Hainaut, F. Omnes, F. Calle, and J. F. Hochedez: Appl. Phys. Lett. 80 (2002) 3198[AIP Scitation].
  7. C. K. Wang, S. J. Chang, Y. K. Su, L. W. Wu, J. K. Sheu, T. C. Wen, W. C. Lai, J. F. Chen, and J. M. Tsai: IEEE Trans. Electron Devices 53 (2006) 38[CrossRef].
  8. H. Jiang and T. Egawa: Electron. Lett. 42 (2006) 1120[AIP Scitation].
  9. E. Ozbay, N. Biyikli, I. Kimukin, T. Kartaloglu, T. Tut, and O. Aytur: IEEE J. Sel. Top. Quantum Electron. 10 (2004) 742.
  10. I. S. Seo, I. H. Lee, Y. J. Park, and C. R. Lee: J. Cryst. Growth 252 (2003) 51[CrossRef].
  11. S. J. Chang, T. K. Ko, J. K. Sheu, S. C. Shei, W. C. Lai, Y. Z. Chiou, Y. C. Lin, C. S. Chang, W. S. Chen, and C. F. Shen: Sens. Actuators A 135 (2007) 502.
  12. S. V. Averine, P. I. Kuznetzov, V. A. Zhitov, and N. V. Alkeev: Solid-State Electron. 52 (2008) 618[CrossRef].
  13. E. Monroy, E. Muñoz, F. J. Sánchez, F. Calley, E. Calleja, B. Beaumont, P. Gibart, J. A. Muñoz, and F. Cussó: Semicond. Sci. Technol. 13 (1998) 1042[IoP STACKS].
  14. N. Biyikli, I. Kimukin, O. Aytur, and E. Ozbay: IEEE Photonics Technol. Lett. 16 (2004) 1718[CrossRef].
  15. S. J. Chang, K. H. Lee, P. C. Chang, Y. C. Wang, C. L. Yu, C. H. Kuo, and S. L. Wu: IEEE J. Quantum Electron. 44 (2008) 916[CrossRef].
  16. W. Y. Weng, S. J. Chang, W. C. Lai, T. J. Hsueh, S. C. Shei, X. F. Zeng, S. L. Wu, and S. C. Hung: IEEE Photonics Technol. Lett. 21 (2009) 504[CrossRef].
  17. S. J. Chang, M. L. Lee, J. K. Sheu, W. C. Lai, Y. K. Su, C. S. Chang, C. J. Kao, G. C. Chi, and J. M. Tsai: IEEE Electron Device Lett. 24 (2003) 212[CrossRef].
  18. P. C. Chang, C. H. Chen, S. J. Chang, Y. K. Su, C. L. Yu, B. R. Huang, and P. C. Chen: Thin Solid Films 498 (2006) 133[CrossRef].
  19. C. H. Chen, Y. H. Tsai, S. Y. Tsai, and C. F. Cheng: Jpn. J. Appl. Phys. 50 (2011) 04DG19[JSAP].
  20. F. Zhang, W. Yang, H. Huang, X. Chen, Z. Wu, H. Zhu, H. Qi, J. Yao, Z. Fan, and J. Shao: Appl. Phys. Lett. 92 (2008) 251102[AIP Scitation].
  21. D. Milam, M. J. Weber, and A. J. Glass: Appl. Phys. Lett. 31 (1977) 822[AIP Scitation].
  22. K. W. Dixon and J. M. Winfield: J. Chem. Soc., Dalton Trans. (1989) 937.
  23. G. E. Jabbour, B. Kippelen, N. R. Armstrong, and N. Peyghambarian: Appl. Phys. Lett. 73 (1998) 1185[AIP Scitation].
  24. P. Piromreun, H. S. Oh, Y. Shen, G. G. Malliaras, J. Campbell Scott, and P. J. Brock: Appl. Phys. Lett. 77 (2000) 2403[AIP Scitation].
  25. M. Reinhard, J. Hanisch, Z. Zhang, E. Ahlswede, A. Colsmann, and U. Lemmer: Appl. Phys. Lett. 98 (2011) 053303[AIP Scitation].
  26. S. Fukuda, H. Kajii, H. Okuya, T. Ogata, M. Takahashi, and Y. Ohmori: Jpn. J. Appl. Phys. 47 (2008) 1307[JSAP].
  27. C. H. Chen: Opt. Rev. 16 (2009) 371.
  28. C. H. Chen, S. J. Chang, M. H. Wu, S. Y. Tsai, and H. J. Chien: Jpn. J. Appl. Phys. 49 (2010) 04DG05[JSAP].
  29. C. L. Yu, C. H. Chen, S. J. Chang, and P. C. Chang: J. Electrochem. Soc. 154 (2007) J71.
  30. C. T. Lee and H. Y. Lee: IEEE Photonics Technol. Lett. 12 (2005) 462[CrossRef].
  31. S. K. Cheung and N. W. Cheung: Appl. Phys. Lett. 49 (1986) 85[AIP Scitation].
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