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Jpn. J. Appl. Phys. 51 (2012) 04DJ01 (5 pages)  |Previous Article| |Next Article|  |Table of Contents|
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Strain Effects on Avalanche Multiplication in a Silicon Nanodot Array

Nobuya Mori1,2, Hideki Minari1,2, Shigeyasu Uno2,3, Hiroshi Mizuta4,5, and Nobuyoshi Koshida6

1Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
2CREST, JST, Chiyoda, Tokyo 102-0075, Japan
3Department of Photonics, College of Science and Engineering, Ritsumeikan University, Kusatsu, Shiga 525-8577, Japan
4Faculty of Physical and Applied Science, University of Southampton, Southampton SO17 1BJ, U.K.
5School of Materials Science, Japan Advanced Institute of Science and Technology, Nomi, Ishikawa 923-1292, Japan
6Graduate School of Engineering, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan

(Received September 26, 2011; revised January 17, 2012; accepted January 18, 2012; published online April 20, 2012)

Strain effects on avalanche multiplication in a one-dimensional Si nanodot array have been theoretically studied. Compressive strain has two competing effects of the band-gap narrowing and the level-separation widening. The former reduces the ionization threshold and the latter reduces the impact ionization rate for higher energy region. Larger carrier multiplication factor is observed under compressive strain condition.

URL: http://jjap.jsap.jp/link?JJAP/51/04DJ01/
DOI: 10.1143/JJAP.51.04DJ01


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