Jpn. J. Appl. Phys. 51 (2012) 04DJ02 (4 pages)  |Previous Article| |Next Article|  |Table of Contents|
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Bidirectional Two-Terminal Switching Device for Non-Volatile Random Access Memory

Gyu-Hyun Kil, Hyung-Jun Yang, Gae-Hun Lee, Seong-Hyun Lee, and Yun-Heub Song

(Received September 24, 2011; accepted December 2, 2011; published online April 20, 2012)

A two-terminal N⁺/P/N⁺ Si junction device that can replace the conventional selective transistor was studied as a bilateral switching device for spin transfer torque magnetic random access memory (STT-MRAM), by three-dimensional device simulation. An N⁺/P/N⁺ junction structure with 30×30 nm² area provides sufficient bidirectional current flow to write data by a drain-induced barrier lowering (DIBL) under a reverse bias at the N⁺/P (or P/N⁺) junction, and high current on/off ratio of 10⁶, which is acceptable for STT-MRAM. In this work, critical parameters such as P-length, P doping, and N⁺ doping are investigated to elucidate the optimal parameter condition in view of write current and current on/off ratio.

URL: http://jjap.jsap.jp/link?JJAP/51/04DJ02/
DOI: 10.1143/JJAP.51.04DJ02

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