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Jpn. J. Appl. Phys. 51 (2012) 04DK01 (4 pages)  |Previous Article| |Next Article|  |Table of Contents|
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Room-Temperature Fabrication of HfON Gate Insulator for Low-Voltage-Operating Pentacene-Based Organic Field-Effect Transistors

Min Liao1, Hiroshi Ishiwara2, and Shun-ichiro Ohmi1

1Department of Electronics and Applied Physics, Tokyo Institute of Technology, Yokohama 226-8502, Japan
2Department of Physics, Division of Quantum Phases and Devices, Konkuk University, Seoul 143-701, Korea

(Received September 26, 2011; revised November 22, 2011; accepted December 12, 2011; published online April 20, 2012)

Low-voltage-operating pentacene-based organic field-effect transistors (OFETs) with different channel lengths have been fabricated by employing a room-temperature-processed HfON gate insulator. It was found that the on/off current ratio of the OFETs can be improved by decreasing the channel length. However, the hole mobility in the OFETs decreases with decreasing channel length owing to the effect of contact resistance. Interestingly, such OFETs with a short channel length (channel W/L = 500/50 µm) also show good electrical properties, such as a high hole mobility of 0.26 cm2 V-1 s-1, a low subthreshold swing of 0.13 V/decade, and a large on/off current ratio of 1×105 at an operating voltage of -2 V.

URL: http://jjap.jsap.jp/link?JJAP/51/04DK01/
DOI: 10.1143/JJAP.51.04DK01


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