Jpn. J. Appl. Phys. 51 (2012) 04DK07 (5 pages)  |Previous Article| |Next Article|  |Table of Contents|
|Full Text PDF (702K)| |Buy This Article|

Light-Emitting Field-Effect Transistors Having Metal Electrodes Modified with an Organic Thin Film

Akinori Okada, Yoshihide Fukaya, Shu Hotta, and Takeshi Yamao

(Received September 26, 2011; accepted January 17, 2012; published online April 20, 2012)

We have improved the emission properties and the carrier mobilities of organic light-emitting field-effect transistors (OLEFETs) by modifying the metal electrode(s) with a thin film of n-type thiophene/phenylene co-oligomer (TPCO). Their semiconductor layer was a p-type TPCO crystal. When we used the modified electrode for electron injection, the device exhibited eight times higher emission intensity than a device with unmodified electrodes. By contrast, employing the modified electrode as the hole injection contact, we achieved the maximum hole mobility of 0.11 cm²·V^-1·s^-1 under the hole-enhancement mode. The modified electrodes effectively functioned for injecting both electrons and holes into the p-type crystal. The origin of this is briefly discussed.

URL: http://jjap.jsap.jp/link?JJAP/51/04DK07/
DOI: 10.1143/JJAP.51.04DK07

References

1. A. Hepp, H. Heil, W. Weise, M. Ahles, R. Schmechel, and H. von Seggern: Phys. Rev. Lett. 91 (2003) 157406[APS].
2. F. Cicoira and C. Santato: Adv. Funct. Mater. 17 (2007) 3421.
3. M. A. Loi, C. Rost-Bietsch, M. Murgia, S. Karg, W. Riess, and M. Muccini: Adv. Funct. Mater. 16 (2006) 41.
4. C. Rost, S. Karg, W. Riess, M. A. Loi, M. Murgia, and M. Muccini: Appl. Phys. Lett. 85 (2004) 1613[AIP Scitation].
5. F. Dinelli, R. Capelli, M. A. Loi, M. Murgia, M. Muccini, A. Facchetti, and T. J. Marks: Adv. Mater. 18 (2006) 1416[CrossRef].
6. R. Capelli, S. Toffanin, G. Generali, H. Usta, A. Facchetti, and M. Muccini: Nat. Mater. 9 (2010) 496[CrossRef].
7. T. Takahashi, T. Takenobu, J. Takeya, and Y. Iwasa: Adv. Funct. Mater. 17 (2007) 1623.
8. T. Takenobu, S. Z. Bisri, T. Takahashi, M. Yahiro, C. Adachi, and Y. Iwasa: Phys. Rev. Lett. 100 (2008) 066601[APS].
9. T. Yamao, Y. Shimizu, K. Terasaki, and S. Hotta: Adv. Mater. 20 (2008) 4109[CrossRef].
10. T. Yamao, Y. Sakurai, K. Terasaki, Y. Shimizu, H. Jinnai, and S. Hotta: Adv. Mater. 22 (2010) 3708[CrossRef].
11. T. Yamao, K. Terasaki, Y. Shimizu, and S. Hotta: J. Nanosci. Nanotechnol. 10 (2010) 1017.
12. S. Hotta, H. Kimura, S. A. Lee, and T. Tamaki: J. Heterocycl. Chem. 37 (2000) 281.
13. T. Katagiri, S. Ota, T. Ohira, T. Yamao, and S. Hotta: J. Heterocycl. Chem. 44 (2007) 853.
14. K. Kajiwara, K. Terasaki, T. Yamao, and S. Hotta: Adv. Funct. Mater. 21 (2011) 2854.
15. S. Hotta, Y. Shimizu, T. Yamao, M. Goto, and R. Azumi: Chem. Lett. 38 (2009) 294[CrossRef].
16. T. Yamao, Y. Shimizu, H. Kuriki, T. Katagiri, and S. Hotta: Jpn. J. Appl. Phys. 49 (2010) 01AB01[JSAP].
17. T. Yamao, S. Ota, T. Miki, S. Hotta, and R. Azumi: Thin Solid Films 516 (2008) 2527[CrossRef].
18. S. M. Sze: Physics of Semiconductor Devices (Wiley, New York, 1981) 2nd ed.
19. Gaussian 09 Revision B.01 (Gaussian, Inc., Wallingford, CT, 2009).
20. T. Yamao, Y. Taniguchi, K. Yamamoto, T. Miki, T. Ohira, and S. Hotta: Jpn. J. Appl. Phys. 47 (2008) 4719[JSAP].
21. K. Heinze, K. Hempel, and M. Beckmann: Eur. J. Inorg. Chem. 2006 (2006) 2040.
22. A. L. Burin and M. A. Ratner: J. Polym. Sci., Part B 41 (2003) 2601.
23. H. B. Michaelson: J. Appl. Phys. 48 (1977) 4729[AIP Scitation].
24. K. Kaneto, M. Yano, M. Shibao, T. Morita, and W. Takashima: Jpn. J. Appl. Phys. 46 (2007) 1736[JSAP].