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Jpn. J. Appl. Phys. 51 (2012) 04DM02 (5 pages)  |Previous Article| |Next Article|  |Table of Contents|
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Design of a Compact Nonvolatile Four-Input Logic Element Using a Magnetic Tunnel Junction and Metal–Oxide–Semiconductor Hybrid Structure

Daisuke Suzuki1,2, Masanori Natsui1,2, Tetsuo Endoh1,3, Hideo Ohno1,4, and Takahiro Hanyu1,2

1Center for Spintronics Integrated Systems (CSIS), Tohoku University, Sendai 980-8577, Japan
2Laboratory for Brainware Systems, Tohoku University, Sendai 980-8577, Japan
3Center for Interdisciplinary Research, Tohoku University, Sendai 980-8578, Japan
4Laboratory for Nanoelectronics and Spintronics, Tohoku University, Sendai 980-8577, Japan

(Received September 26, 2011; revised January 20, 2012; accepted January 30, 2012; published online April 20, 2012)

A nonvolatile logic element (NV-LE) using a magnetic tunnel junction (MTJ) and metal–oxide–semiconductor (MOS)-hybrid structure is proposed for a high-density field-programmable gate array with an instant-on capability. Since the output current level of a multiplexer tree including MTJ devices is directly evaluated and amplified by a single differential amplifier on the final stage of the LUT circuit, the number of wasted sense amplifiers is greatly reduced and a compact 4-input NV-LE can be implemented. Moreover, the use of dynamic current-mode logic based circuitry makes it possible a high-speed operation with low-active power dissipation due to the elimination of steady current-path. In fact, the proposed 4-input NV-LE reduces transistor counts to 63% with no performance degradation compared to those of a conventional complementary-MOS-based implementation.

URL: http://jjap.jsap.jp/link?JJAP/51/04DM02/
DOI: 10.1143/JJAP.51.04DM02


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