Jpn. J. Appl. Phys. 51 (2012) 04DP02 (5 pages)  |Previous Article| |Next Article|  |Table of Contents|
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Extraction Enhanced Lateral Insulated Gate Bipolar Transistor: A Super High Speed Lateral Insulated Gate Bipolar Transistor Superior to Lateral Dobule Difused Metal Oxide Semiconductor Field-Effect Transistor

Youichi Ashida¹, Shigeki Takahashi¹, Satoshi Shiraki^1,2, Norihito Tokura^1,2, and Akio Nakagawa³

(Received September 25, 2011; accepted January 28, 2012; published online April 20, 2012)

We have successfully developed novel extraction enhanced lateral insulated gate bipolar transistors (E²LIGBTs) in conventional silicon on insulator (SOI) wafers, which exhibit super-high speed switching of 34 ns turn-off time and a low on-state voltage of 3.7 V at 84 A/cm² simultaneously with a high breakdown voltage of 738 V. This is the first report showing its superior switching speed and on-resistance compared to conventional lateral double diffused metal oxide semiconductor field-effect transistor (LDMOS). The superior performance is achieved by a new anode structure designed with the proposed E² concept, which simultaneously achieves enhanced electron extraction and suppression of hole injection at the anode region without life time control. The E² concept is realized using the anode structure, consisting of a narrow p⁺-injector and a wide Schottky contact on a lightly doped p-layer over an n-buffer. The switching speed can be controlled by the area ratio of the Schottky area over the injector area.

URL: http://jjap.jsap.jp/link?JJAP/51/04DP02/
DOI: 10.1143/JJAP.51.04DP02

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