Jpn. J. Appl. Phys. 51 (2012) 04DP09 (4 pages)  |Previous Article|  |Table of Contents|
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Current Transport Characteristics of Quasi-Al_xGa_1-xN/SiC Heterojunction Bipolar Transistors with Various Band Discontinuities

Takafumi Okuda¹, Hiroki Miyake¹, Tsunenobu Kimoto^1,2, and Jun Suda¹

(Received September 26, 2011; accepted January 11, 2012; published online April 20, 2012)

The current transport characteristics of quasi-Al_xGa_1-xN/SiC heterojunction bipolar transistors (HBTs) with various band discontinuities were investigated in a low-current range using a Gummel plot. In the low-current range, the base currents of the HBTs were dominated by recombination currents. The collector current characteristics of the HBTs in the low-current range were almost the same in spite of the various band discontinuities, and the ideality factor n was 1.0. The band discontinuities at the heterojunction had no effect on electron injection in the low-current range. This is because the collector currents were dominated by diffusion process in the base region rather than by injection process at the AlGaN/SiC interface.

URL: http://jjap.jsap.jp/link?JJAP/51/04DP09/
DOI: 10.1143/JJAP.51.04DP09

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