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Jpn. J. Appl. Phys. 51 (2012) 051101 (7 pages)  |Previous Article| |Next Article|  |Table of Contents|
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Quantitative Analysis of Surface Morphology of Boron-Doped Zinc Oxide for Microcrystalline Silicon Solar Cells

Taweewat Krajangsang1, Shuichi Hiza1, Teruaki Hayashi1, Ihsanul Afdi Yunaz1, Aswin Hongsingthong1, Shinsuke Miyajima1, and Makoto Konagai1,2

1Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
2Photovoltaics Research Center (PVREC), Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan

(Received October 18, 2010; accepted January 29, 2012; published online April 13, 2012)

The optimization of textured boron-doped conductive zinc oxide (ZnO:B) films deposited by metal organic chemical vapor deposition (MOCVD) for hydrogenated microcrystalline silicon (µc-Si:H) solar cells was performed. We found that the argon (Ar) plasma treatment of a textured ZnO:B substrate is effective in improving the open-circuit voltage and fill factor of µc-Si:H solar cells. We proposed (tan θ)/λ2 as an evaluation factor and found that there is a clear correlation between the (tan θ)/λ2 of textured ZnO:B films and the open-circuit voltage of µc-Si:H solar cells. Moreover, the effect of the surface morphology of a textured ZnO:B substrate on the growth of intrinsic hydrogenated amorphous silicon (i-a-Si:H) top layers was examined to obtain the optimum conditions for preparing a-Si:H/µc-Si:H tandem solar cells. We confirmed that our proposed evaluation factor (tan θ)/λ2 could be used to obtain the surface morphology of i-a-Si:H top layers that are appropriate for µc-Si:H bottom-cell deposition.

URL: http://jjap.jsap.jp/link?JJAP/51/051101/
DOI: 10.1143/JJAP.51.051101


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