Jpn. J. Appl. Phys. 51 (2012) 054302 (5 pages)  |Previous Article| |Next Article|  |Table of Contents|
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Practical Guidance of Parameter Extraction for Device Simulation of Thin-Film Transistors

Mutsumi Kimura^1,2

(Received January 15, 2012; accepted February 23, 2012; published online April 25, 2012)

We introduce practical guidelines for parameter extraction in the device simulation of thin-film transistors. First, the deep trap density is extracted by fitting the subthreshold swing, the surface-fixed charge density by the turn-on voltage, and the tail trap density by the threshold current. Next, the carrier mobility is extracted by fitting the transconductance and the cross section of the trap states by the off current. This procedure is essential because the changes in the parameters extracted later do not affect the parameters extracted formerly and we do not have to iterate the fitting, which makes the parameter extraction speedy and robust against divergence. These practical guidelines are useful for device development, characteristic prospect, and process diagnosis.

URL: http://jjap.jsap.jp/link?JJAP/51/054302/
DOI: 10.1143/JJAP.51.054302

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