Jpn. J. Appl. Phys. 51 (2012) 05EE03 (4 pages)  |Previous Article| |Next Article|  |Table of Contents|
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Novel Through Silicon Vias Leakage Current Evaluation Using Infrared-Optical Beam Irradiation

Yoriko Mizushima^1,2, Hideki Kitada^1,2, Kazushige Koshikawa³, Shinsuke Suzuki³, Tomoji Nakamura¹, and Takayuki Ohba²

(Received October 15, 2011; accepted February 12, 2012; published online May 21, 2012)

To evaluate the leakage current around through-silicon-vias (TSVs) in three-dimensional integrated circuits (3D-ICs), we propose the use of the IR-optical-beam-induced resistance change (IR-OBIRCH) method, which enables point detection of leakage currents. Leakage currents were detected directly from cross-sectional TSV samples to give more detailed information than can be obtained from conventional nondestructive top-view observations. Local leakage currents between Cu vias and the Si substrate resulted from poor sidewall coverage of the insulator, and were monitored with an image map and found to be 100 nA. Cross-sectional OBIRCH is suited for point leakage current measurements and for optimizing the metallization process of TSVs.

URL: http://jjap.jsap.jp/link?JJAP/51/05EE03/
DOI: 10.1143/JJAP.51.05EE03

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