Jpn. J. Appl. Phys. 51 (2012) 06FD08 (4 pages)  |Previous Article| |Next Article|  |Table of Contents|
|Full Text PDF: FREE (718K)|

Immunosensors Based on Graphene Field-Effect Transistors Fabricated Using Antigen-Binding Fragment

Shogo Okamoto, Yasuhide Ohno, Kenzo Maehashi, Koichi Inoue, and Kazuhiko Matsumoto

(Received November 30, 2011; revised January 17, 2012; accepted January 18, 2012; published online June 20, 2012)

To realize the antigen-antibody reaction for specific protein sensing using graphene field-effect transistors (G-FETs), the antigen-binding fragment (Fab), which is a component of conventional antibodies, was functionalized onto the graphene channel surface. Since the height of the Fab is approximately 3 nm, the antigen-antibody reaction is expected to occur inside the electrical double layer in the buffer solution. After functionalization of Fab onto the G-FET, the transfer characteristics shifted in the positive gate-voltage direction, indicating that the Fab was successfully modified onto the graphene surface. Then, the drain current changed after injecting the target proteins, and the dissociation constant was estimated to be 2.3 nM from the concentration dependence. These results indicate that the Fab-modified G-FETs have high potentials as highly sensitive biological sensors fabricated on the basis of the antigen-antibody reaction.

URL: http://jjap.jsap.jp/link?JJAP/51/06FD08/
DOI: 10.1143/JJAP.51.06FD08

References

1. R. J. Chen, S. Bangsaruntip, K. A. Drouvalakis, N. W. S. Kam, M. Shim, Y. Li, W. Kim, P. J. Utz, and H. Dai: Proc. Natl. Acad. Sci. U.S.A. 100 (2003) 4984.
2. K. Maehashi, T. Katsura, K. Kerman, Y. Takamura, K. Matsumoto, and E. Tamiya: Anal. Chem. 79 (2007) 782.
3. J. P. Kim, B. Y. Lee, S. Hong, and S. J. Sim: Anal. Biochem. 381 (2008) 193.
4. F. N. Ishikawa, B. Stauffer, D. A. Caron, and C. Zhou: Biosens. Bioelectron. 24 (2009) 2967.
5. M. R. McDevitt, D. Chattopadhyay, B. J. Kappel, J. S. Jaggi, S. R. Schiffman, C. Antczak, J. T. Njardarson, R. Brentjens, and D. A. Scheinberg: J. Nucl. Med. 48 (2007) 1180.
6. G. Wei, F. Xu, Z. Li, and K. D. Jandt: J. Phys. Chem. C 115 (2011) 11453.
7. X. H. Jina, A. Ishii, K. Aoki, S. Ishida, K. Mukasa, and S. Ohno: J. Virol. Methods 171 (2011) 405.
8. J. W. Ko, J. M. Woo, J. Ahn, J. H. Cheon, J. H. Lim, S. H. Kim, H. Chun, E. Kim, and Y. J. Park: ACS Nano 5 (2011) 4365.
9. N. Mohanty and V. Berry: Nano Lett. 8 (2008) 4469[CrossRef].
10. Y. Ohno, K. Maehashi, Y. Yamashiro, and K. Matsumoto: Nano Lett. 9 (2009) 3318[CrossRef].
11. Y. Ohno, K. Maehashi, and K. Matsumoto: Biosens. Bioelectron. 26 (2010) 1727.
12. Y. Ohno, K. Maehashi, and K. Matsumoto: J. Am. Chem. Soc. 132 (2010) 18012[CrossRef].
13. S. Mao, G. Lu, K. Yu, Z. Bo, and J. Chen: Adv. Mater. 22 (2010) 3521[CrossRef].
14. S. Mao, K. Yu, G. Lu, and J. Chen: Nano Res. 4 (2011) 921.
15. Y. Xiea, A. Chena, D. Dua, and Y. Lin: Anal. Chim. Acta 699 (2011) 44.
16. Y. Li, W. K. Yang, M. Q. Fan, and A. Liu: Anal. Sci. 27 (2011) 727.
17. Y. Sofue, Y. Ohno, K. Maehashi, K. Inoue, and K. Matsumoto: Jpn. J. Appl. Phys. 50 (2011) 06GE07[JSAP].
18. Y. Ohno, K. Maehashi, K. Inoue, and K. Matsumoto: Jpn. J. Appl. Phys. 50 (2011) 070120[JSAP].
19. K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, and A. A. Firsov: Science 306 (2004) 666[Science].
20. A. K. Geim and K. S. Novoselov: Nat. Mater. 6 (2007) 183[CrossRef].
21. K. I. Bolotin, K. J. Sikes, Z. Jiang, M. Klima, G. Fudenberg, J. Hone, P. Kim, and H. L. Stormer: Solid State Commun. 146 (2008) 351[CrossRef].
22. T. O. Wehling, K. S. Novoselov, S. V. Morozov, E. E. Vdovin, M. I. Katsnelson, A. K. Geim, and A. I. Lichtenstein: Nano Lett. 8 (2008) 173[CrossRef].
23. K. Nagashio, T. Nishimura, K. Kita, and A. Toriumi: Jpn. J. Appl. Phys. 49 (2010) 051304[JSAP].
24. K. Nagashio, T. Nishimura, K. Kita, and A. Toriumi: Appl. Phys. Lett. 97 (2010) 143514[AIP Scitation].
25. J. R. Crowther: ELISA: Theory and Practice (Humana Press, New York, 1995).
26. H. Wang, Q. Zhang, X. Chu, T. Chen, J. Ge, and R. Yu: Angew. Chem., Int. Ed. 50 (2011) 7065.
27. M. Krüger, M. R. Buitelaar, T. Nussbaumer, C. Schönenberger, and L. Forró: Appl. Phys. Lett. 78 (2001) 1291[AIP Scitation].
28. S. Rosenblatt, Y. Yaish, J. Park, J. Gore, V. Sazonova, and P. L. McEuen: Nano Lett. 2 (2002) 869[CrossRef].
29. T. Katsura, Y. Yamamoto, K. Maehashi, Y. Ohno, and K. Matsumoto: Jpn. J. Appl. Phys. 47 (2008) 2060[JSAP].
30. A. Ferrari, J. Meyer, V. Scardaci, C. Casiraghi, M. Lazzeri, F. Mauri, S. Piscanec, D. Jiang, K. Novoselov, S. Roth, and A. Geim: Phys. Rev. Lett. 97 (2006) 187401[APS].
31. R. J. Chen, Y. Zhang, D. Wang, and H. Dai: J. Am. Chem. Soc. 123 (2001) 3838[CrossRef].
32. T. Li, M. Yang, and H. Li: J. Electroanal. Chem. 655 (2011) 50.
33. S. R. Guo, J. Lin, M. Penchev, E. Yengel, M. Ghazinejad, C. S. Ozkan, and M. Ozkan: J. Nanosci. Nanotechnol. 11 (2011) 5258.
34. S. K. Calderwood, M. A. Khaleque, D. B. Sawyer, and D. R. Ciocca: Trends Biochem. Sci. 31 (2006) 164.
35. J. S. Hahn: BMB Rep. 42 (2009) 623.
36. Q. Shi, Y. Zhou, and Y. Sun: Biotechnol. Prog. 21 (2005) 516.
37. O. S. Kwon, T. J. Hong, S. K. Kim, J. H. Jeong, J. S. Hahn, and J. Jang: Biosens. Bioelectron. 25 (2010) 1307.
38. K. Maehashi, K. Matsumoto, Y. Takamura, and E. Tamiya: Electroanalysis 21 (2009) 1285.
39. S. Bae, H. Kim, Y. Lee, X. Xu, J.-S. Park, Y. Zheng, J. Balakrishnan, T. Lei, H. R. Kim, Y. I. Song, Y.-J. Kim, K. S. Kim, B. Özyilmaz, J.-H. Ahn, B. H. Hong, and S. Iijima: Nat. Nanotechnol. 5 (2010) 574.
40. R. Negishi, H. Hirano, Y. Ohno, K. Maehashi, K. Matsumoto, and Y. Kobayashi: Jpn. J. Appl. Phys. 50 (2011) 06GE04[JSAP].
41. H. Fukidome, Y. Miyamoto, H. Handa, E. Saito, and M. Suemitsu: Jpn. J. Appl. Phys. 49 (2010) 01AH03[JSAP].