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Jpn. J. Appl. Phys. 51 (2012) 06FD11 (4 pages)  |Previous Article| |Next Article|  |Table of Contents|
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Carbon Nanotube-Based Floating Gate Memories with High-k Dielectrics

Yusuke Fujii, Takahiro Ohori, Yasuhide Ohno, Kenzo Maehashi, Koichi Inoue, and Kazuhiko Matsumoto

The Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047, Japan

(Received November 30, 2011; revised February 7, 2012; accepted February 27, 2012; published online June 20, 2012)

Carbon nanotube (CNT)-based floating gate memories with high-k dielectrics were fabricated for low-power-consumption devices owing to the increase in the electric field intensity in the tunneling layer of memory devices. The memory with a high-k dielectric consisting of an Al2O3 layer achieved a larger hysteresis than the memory with a SiO2 layer. The results were well explained by simple electric field calculations using a cylindrical capacitor model. Furthermore, memory operation at a lower pulse voltage of 2 V or a shorter pulse width of 0.01 s was demonstrated on the basis of the memory with the Al2O3 layer. The results indicate that CNT-based floating gate memories with high-k dielectrics are promising candidates for low-power-consumption memories.

URL: http://jjap.jsap.jp/link?JJAP/51/06FD11/
DOI: 10.1143/JJAP.51.06FD11


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References

  1. M. S. Dresselhaus, G. Dresselhaus, and P. C. Eklund: Science of Fullerenes and Carbon Nanotubes (Academic Press, New York, 1996).
  2. M. Bockrath, D. Cobden, P. McEuen, N. Chopra, A. Zettl, A. Thess, and R. Smalley: Science 275 (1997) 1922[Science].
  3. S. Iwasaki, M. Maeda, T. Kamimura, K. Maehashi, Y. Ohno, and K. Matsumoto: Jpn. J. Appl. Phys. 47 (2008) 2036[JSAP].
  4. Y. Ohno, Y. Asai, K. Maehashi, K. Inoue, and K. Matsumoto: Appl. Phys. Lett. 94 (2009) 053112[AIP Scitation].
  5. J. Wang: Electroanalysis 17 (2005) 7.
  6. K. Maehashi and K. Matsumoto: Sensors 9 (2009) 5368.
  7. J. Okuno, K. Maehashi, K. Kerman, K. Matsumoto, Y. Takamura, and E. Tamiya: Biosens. Bioelectron. 22 (2007) 2377.
  8. Y. Tsujita, K. Maehashi, K. Matsumoto, M. Chikae, S. Torai, Y. Takamura, and E. Tamiya: Jpn. J. Appl. Phys. 47 (2008) 2064[JSAP].
  9. S. J. Tans, A. R. M. Verschueren, and C. Dekker: Nature 393 (1998) 49[CrossRef].
  10. R. Martel, T. Schmidt, H. R. Shea, T. Hertel, and P. Avouris: Appl. Phys. Lett. 73 (1998) 2447[AIP Scitation].
  11. H. Okimoto, T. Takenobu, K. Yanagi, H. Shimotani, Y. Miyata, H. Kataura, and Y. Iwasa: Jpn. J. Appl. Phys. 49 (2010) 02BD09[JSAP].
  12. Y. Li, T. Kaneko, T. Ogawa, M. Takahashi, and R. Hatakeyama: Jpn. J. Appl. Phys. 47 (2008) 2048[JSAP].
  13. A. Bachtold, P. Hadley, T. Nakanishi, and C. Dekker: Science 294 (2001) 1317[Science].
  14. V. Derycke, R. Martel, J. Appenzeller, and P. Avouris: Nano Lett. 1 (2001) 453[CrossRef].
  15. T. Kishimoto, Y. Ohno, K. Maehashi, K. Inoue, and K. Matsumoto: Jpn. J. Appl. Phys. 49 (2010) 06GG02[JSAP].
  16. Q. Cao, H. Kim, N. Pimparkar, J. Kulkarni, C. Wang, M. Shim, K. Roy, M. Alam, and J. Rogers: Nature 454 (2008) 24[CrossRef].
  17. K. Maehashi, T. Katsura, K. Karman, Y. Takamura, K. Matsumoto, and E. Tamiya: Anal. Chem. 79 (2007) 782.
  18. A. Star, J. Gabriel, K. Bradley, and G. Gruner: Nano Lett. 3 (2003) 459[CrossRef].
  19. K. Besteman, J. Lee, F. Wiertz, H. Heering, and C. Dekker: Nano Lett. 3 (2003) 727[CrossRef].
  20. Y. Yamamoto, Y. Ohno, K. Maehashi, and K. Matsumoto: Jpn. J. Appl. Phys. 48 (2009) 06FJ01[JSAP].
  21. M. Fuhrer, B. Kim, T. Durkop, and T. Bringlinger: Nano Lett. 2 (2002) 755[CrossRef].
  22. J. B. Cui, R. Sordan, M. Burghard, and K. Kern: Appl. Phys. Lett. 81 (2002) 3260[AIP Scitation].
  23. W. B. Choi, S. Chae, E. Bae, J. W. Lee, B. H. Cheong, J. R. Kim, and J. J. Kim: Appl. Phys. Lett. 82 (2002) 275[AIP Scitation].
  24. T. Ohori, S. Nagaso, Y. Ohno, K. Maehashi, K. Inoue, and K. Matsumoto: Jpn. J. Appl. Phys. 49 (2010) 06GG13[JSAP].
  25. W. J. Yu, B. R. Kang, I. H. Lee, Y. S. Min, and Y. H. Lee: Adv. Mater. 21 (2009) 4821[CrossRef].
  26. W. J. Yu, S. H. Chae, S. Y. Lee, D. L. Duong, and Y. H. Lee: Adv. Mater. 23 (2011) 1889[CrossRef].
  27. T. Ohori, Y. Ohno, K. Maehashi, K. Inoue, Y. Hayashi, and K. Matsumoto: Appl. Phys. Lett. 98 (2011) 223101[AIP Scitation].
  28. M. Olmedo, C. Wang, K. Ryu, H. Zhou, J. Ren, N. Zhan, C. Zhou, and J. Liu: ACS Nano 5 (2011) 7972.
  29. U. Ganguly, E. C. Kan, and Y. Zhang: Appl. Phys. Lett. 87 (2005) 043108[AIP Scitation].
  30. L. Marty, A. M. Bonnot, A. Bonhomme, A. Iaia, C. Naud, E. André, and V. Bouchiat: Small 2 (2006) 110.
  31. M. Y. Chan, L. Wei, Y. Chen, L. Chan, and P. S. Lee: Carbon 47 (2009) 3063.
  32. M. H. White, D. A. Adams, and J. Bu: IEEE Circuits Devices Mag. 16 (2000) 22.
  33. A. Javey, S. W. Nam, R. S. Friedman, H. Yan, and C. M. Lieber: Nano Lett. 7 (2007) 773[CrossRef].
  34. Y. Zhu, B. Li, J. Liu, G. F. Liu, and J. A. Yarmoff: Appl. Phys. Lett. 89 (2006) 233113[AIP Scitation].
  35. X. Wang, J. Liu, W. Bai, and D. L. Kwong: IEEE Trans. Electron Devices 51 (2004) 597[CrossRef].
  36. Y. Zhao, X. Wang, H. Shang, and M. H. White: Solid-State Electron. 50 (2006) 1667[CrossRef].
  37. S. Choi, M. Cho, H. Hwang, and J. W. Kim: J. Appl. Phys. 94 (2003) 5408[AIP Scitation].
  38. G. Wang and M. H. White: Solid-State Electron. 52 (2008) 1491[CrossRef].
  39. K. Ohara, Y. Uraoka, T. Fuyuki, I. Yamashita, T. Yaegashi, M. Moniwa, and M. Yoshimaru: Jpn. J. Appl. Phys. 48 (2009) 04C153[JSAP].
  40. T. Tanamoto, R. Ohba, S. I. Yasuda, K. Abe, and S. Fujita: Jpn. J. Appl. Phys. 44 (2005) 6349[JSAP].
  41. X. Zhu, D. Gu, Q. Li, D. E. Ioannou, H. Baumgart, J. S. Suehle, and C. A. Richter: Microelectron. Eng. 86 (2009) 1957.
  42. X. Zhu, Y. Yang, Q. Li, D. E. Ioannou, J.-S. Suehle, and C. A. Richter: Microelectron. Eng. 85 (2008) 2403.
  43. X. Zhu, Q. Li, D. E. Ioannou, D. Gu, J. E. Bonevich, H. Baumgart, J. S. Suehle, and C. A. Richter: Nanotechnology 22 (2011) 254020[IoP STACKS].
  44. K. Maehashi, Y. Ohno, K. Inoue, K. Matsumoto, T. Niki, and H. Matsumura: Appl. Phys. Lett. 92 (2008) 183111[AIP Scitation].
  45. D. Kaminishi, H. Ozaki, Y. Ohno, K. Maehashi, K. Inoue, K. Matsumoto, Y. Seri, A. Masuda, and H. Matsumura: Appl. Phys. Lett. 86 (2005) 113115[AIP Scitation].
  46. K. Maehashi, S. Iwasaki, Y. Ohno, T. Kishimoto, K. Inoue, and K. Matsumoto: J. Electron. Mater. 39 (2010) 376.
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