Jpn. J. Appl. Phys. 51 (2012) 06FJ01 (5 pages)  |Previous Article| |Next Article|  |Table of Contents|
|Full Text PDF: FREE (756K)|

Large-Area Nanotemplate Process and Its Application to Roll Imprint

Jun-Hyuk Choi, Soon-Won Lee, Ji-Hye Lee, Dae-Geun Choi, Jun-Ho Jeong, and Eung-Sug Lee

(Received October 11, 2011; accepted February 19, 2012; published online June 20, 2012)

This study developed a stitching process for unit element nanotemplates based on step and repeat imprinting for use in enlarged soft mold fabrication. This mold was subsequently used for the custom-developed roll-to-plate UV nanoimprint process. The distinctive features of roll UV imprinting include the following: (1) the UV source is embedded within a roll mold made of quartz so that it can illuminate a resist coated on either a transparent or an opaque substrate, (2) the press-contact between the resist and soft mold wrapped around the quartz mold was designed to synchronize the rolling operation with the linear motion of the substrate, which helped minimize the residue thickness, and (3) a compressed pneumatic force was applied along the contact line of the roll imprint, which helped attenuate any possible level mismatch on the stitched mold surface.

URL: http://jjap.jsap.jp/link?JJAP/51/06FJ01/
DOI: 10.1143/JJAP.51.06FJ01

References

1. S. H. Jeon, J. W. Kang, H. D. Park, J. J. Kim, J. R. Youn, J. Y. Shim, J. H. Jeong, D. G. Choi, K. D. Kim, A. O. Altun, S. H. Kim, and Y. H. Lee: Appl. Phys. Lett. 92 (2008) 223307[AIP Scitation].
2. K. Ishihara, M. Fujita, I. Matsubara, T. Asano, S. Noda, H. Ohata, A. Hirasawa, and H. Nakada: Appl. Phys. Lett. 90 (2007) 11114[AIP Scitation].
3. H. A. Atwater and A. Polman: Nat. Mater. 9 (2010) 205[CrossRef].
4. H. Ono, Y. Ono, K. Kasahara, J. Mizuno, and S. Shoji: Jpn. J. Appl. Phys. 47 (2008) 933[JSAP].
5. K. D. Kim, J. H. Jeong, S. H. Park, D. G. Choi, J. H. Choi, and E. S. Lee: Microelectron. Eng. 86 (2009) 1983.
6. J. G. Kim, Y. Sim, Y. Cho, J. W. Seo, S. Kwon, J. W. Park, H. G. Choi, H. Kim, and S. Lee: Microelectron. Eng. 86 (2009) 2427.
7. Y. Cho, S. Kwon, J. W. Seo, J. G. Kim, J. W. Cho, J. W. Park, H. Kim, and S. Lee: Microelectron. Eng. 86 (2009) 2417.
8. S. H. Ahn and L. J. Guo: ACS Nano 3 (2009) 2304.
9. C. S. Stuart and Y. Chen: ACS Nano 3 (2009) 2062.
10. S. H. Ahn and L. J. Guo: Adv. Mater. 20 (2008) 2044[CrossRef].
11. J. Han, S. Choi, B. S. Lee, and S. Kang: J. Phys. D 42 (2009) 115503[IoP STACKS].
12. S. M. Seo, T. I. Kim, and H. H. Lee: Microelectron. Eng. 84 (2007) 567.
13. S. Y. Yang, F. S. Cheng, S. W. Xu, P. H. Huang, and T. C. Huang: Microelectron. Eng. 85 (2008) 603.
14. P. Maury, D. Turkenburg, N. Stroeks, P. Giesen, M. Wijnen, R. Tacken, E. Meinders, and R. van der Werf: J. Photopolym. Sci. Technol. 24 (2011) 43.
15. E. R. Holland, A. Jeans, P. Mei, C. P. Taussig, R. E. Elder, C. Bell, E. Howard, and J. Stowell: Proc. SPIE 7970 (2011) 797016[AIP Scitation].
16. A. Jeans, M. Almanza-Workman, R. Cobene, R. Elder, R. Garcia, F. Gomez-Pancorbo, W. Jackson, M. Jam, H. J. Kim, O. Kwon, H. Luo, J. Maltabes, P. Mei, C. Perlov, M. Smith, C. Taussig, F. Jeffrey, S. Braymen, J. Hauschildt, K. Junge, D. Larson, and D. Stieler: Proc. SPIE 7637 (2010) 763719[AIP Scitation].
17. T. Yanagishita, K. Nishio, and H. Masuda: Jpn. J. Appl. Phys. 45 (2006) L804[JSAP].
18. H. Sohn, J. H. Jeong, Y. S. Sim, K. D. Kim, and E. S. Lee: Jpn. J. Appl. Phys. 45 (2006) 5902[JSAP].
19. C. Peroz, S. Dhuey, M. Volger, Y. Wu, D. Olynick, and S. Cabrini: Nanotechnology 21 (2011) 445301[IoP STACKS].
20. D. Lentz, G. Doyle, M. Miller, G. Schmid, M. Ganapathisuramanian, X. Lu, D. Resnick, and D. L. LaBrake: Proc. SPIE 6517 (2007) 65172F[AIP Scitation].
21. T. Glinsner, U. Plachetka, T. Matthias, M. Wimplinger, and P. Lindner: Proc. SPIE 6517 (2007) 651718[AIP Scitation].
22. R. W. Ryan, R. F. Kopf, A. Tate, J. Burm, and R. A. Hamm: J. Vac. Sci. Technol. B 16 (1998) 2110[AIP Scitation].
23. V. Dragoi, C. Schaefer, P. Lindner, M. Wimplinger, and S. Farrens: Solid State Technol. 47 (2004) 61.
24. E. S. Hwang, J. W. Park, J. G. Kim, Y. T. Cho, K. M. Yeo, J. W. Seo, H. Kim, and S. W. Lee: Jpn. J. Appl. Phys. 48 (2009) 050211[JSAP].
25. S. Y. Park, K. B. Choi, G. H. Kim, and J. J. Lee: Microelectron. Eng. 86 (2009) 604.
26. S. Y. Hwang, S. H. Hong, H. Y. Jung, and H. Lee: Microelectron. Eng. 86 (2009) 642.
27. J. Taniguchi and N. Unno: J. Vac. Sci. Technol. B 29 (2011) 06FC08[AIP Scitation].
28. J. J. Lee, S. Y. Park, K. B. Choi, and G. H. Kim: Microelectron. Eng. 85 (2008) 861.
29. W. Jiang, H. Liu, Y. Ding, Y. Tang, Y. S. Shi, L. Yin, and B. Lu: J. Micromech. Microeng. 19 (2009) 015033.
30. P. Maury, D. Turkenburg, N. Stroeks, P. Giesen, I. Barbu, E. Meinders, A. Van Bremen, N. Iosad, R. van der Werf, and H. Onvlee: Microelectron. Eng. 88 (2011) 2052.