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Jpn. J. Appl. Phys. 51 (2012) 06FJ06 (6 pages)  |Previous Article| |Next Article|  |Table of Contents|
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Impact of Resist Shrinkage and Its Correction in Nanoimprint Lithography

Akira Horiba1,3, Masaaki Yasuda1,3, Hiroaki Kawata1,3, Makoto Okada2,3, Shinji Matsui2,3, and Yoshihiko Hirai1,3

1Physics and Electronics Engineering, Graduate School of Engineering, Osaka Prefecture University, Sakai 599-8531, Japan
2Graduate School of Science, LASTI, University of Hyogo, Kamigori, Hyogo 678-1205, Japan
3Core Research for Evolutional Science and Technology, Japan Science and Technology Agency, Kawaguchi, Saitama 332-0012, Japan

(Received November 28, 2011; accepted March 5, 2012; published online June 20, 2012)

Relative critical dimension (CD) errors in nanoimprint lithography are estimated by numerical simulation for various pattern sizes. From the results, transfer functions to estimate the CD errors are proposed, which are expressed similarly to a low- or high-pass filter in terms of the spatial frequency. Using the transfer functions, the mold pattern sizes are corrected to compensate the shrinkage.

URL: http://jjap.jsap.jp/link?JJAP/51/06FJ06/
DOI: 10.1143/JJAP.51.06FJ06


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