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Jpn. J. Appl. Phys. 51 (2012) 06FJ07 (6 pages)  |Previous Article| |Next Article|  |Table of Contents|
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Simulation of Resist Filling Properties under Condensable Gas Ambient in Ultraviolet Nanoimprint Lithography

Yoshinori Nagaoka1,3, Ryosuke Suzuki1,3, Hiroshi Hiroshima2,3, Naoki Nishikura1,3, Hiroaki Kawata1,3, Noboru Yamazaki4, Takuya Iwasaki4, and Yoshihiko Hirai1,3

1Osaka Prefecture University, Sakai 599-8531, Japan
2National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568, Japan
3CREST-JST, Kawaguchi, Saitama 332-0012, Japan
4Mizuho Information and Research Institute, Chiyoda, Tokyo 101-8443, Japan

(Received November 30, 2011; revised March 14, 2012; accepted March 22, 2012; published online June 20, 2012)

Resist filling characteristics under a condensable gas ambient in UV nanoimprint lithography are firstly verified by numerical simulation for nanoscale patterns with various resist properties. The resist filling time in condensable gas ambient is compared with that in a vacuum ambient and the result shows that the filling times are almost the same. Also, the filling time for various pattern sizes are investigated. The filling time decreases in proportion to the feature size for a microscale pattern; however, it increases in a nano scale pattern due to the surface tension of the resist. Nevertheless, the resist filling time is sufficiently short for practical use.

URL: http://jjap.jsap.jp/link?JJAP/51/06FJ07/
DOI: 10.1143/JJAP.51.06FJ07


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