Jpn. J. Appl. Phys. 51 (2012) 080201 (3 pages)  |Previous Article| |Next Article|  |Table of Contents|
|Full Text PDF (494K)| |Buy This Article|

Rapid Communication

InAs Quantum Dot Growth on a Thin GaNP Buffer Layer on GaP by Metalorganic Chemical Vapor Deposition

Tomoyuki Miyamoto, Satoru Tanabe, Rei Nishio, Yoshitaka Kobayashi, and Ryoichiro Suzuki

(Received April 3, 2012; accepted May 22, 2012; published online July 10, 2012)

InAs quantum dots (QDs) on a 2-nm-thick GaNP buffer layer on GaP were investigated using low-pressure metalorganic chemical vapor deposition. The InAs QDs density was significantly increased from 2.6×10⁹ to 2.0×10¹⁰ cm^-2 by increasing the nitrogen composition from 0 to 4.5% in GaNP. The formation characteristics of InAs QDs were also investigated at various InAs supply amounts from 0.7 to 2.5 monolayers (ML). The generation of QDs on the GaNP and GaP buffer layers started at the InAs supplies of 1.0 and 1.1 ML, respectively. Since the lattice mismatches were large, these supply amounts were definitely smaller than that on GaAs.

URL: http://jjap.jsap.jp/link?JJAP/51/080201/
DOI: 10.1143/JJAP.51.080201

References

1. Y. Fujimoto, H. Yonezu, A. Utsumi, K. Momose, and Y. Furukawa: Appl. Phys. Lett. 79 (2001) 1306[AIP Scitation].
2. S. Y. Moon, H. Yonezu, Y. Furukawa, S. M. Kim, Y. Morita, and A. Wakahara: Jpn. J. Appl. Phys. 44 (2005) 1752[JSAP].
3. S. Liebich, M. Zimprich, A. Beyer, C. Lange, D. J. Franzbach, S. Chatterjee, N. Hossain, S. J. Sweeney, K. Volz, B. Kunert, and W. Stolz: Appl. Phys. Lett. 99 (2011) 071109[AIP Scitation].
4. B. Junno, T. Junno, M. S. Miller, and L. Samuelson: Appl. Phys. Lett. 72 (1998) 954[AIP Scitation].
5. R. Leon, C. Lobo, T. P. Chin, J. M. Woodall, S. Fafard, S. Ruvimov, Z. Liliental-Weber, and M. A. S. Kalceff: Appl. Phys. Lett. 72 (1998) 1356[AIP Scitation].
6. W. Guo, A. Bondi, C. Cornet, H. Folliot, A. Létoublon, S. Boyer-Richard, N. Chevalier, M. Gicquel, B. Alsahwa, A. L. Corre, J. Even, O. Durand, and S. Loualiche: Phys. Status Solidi C 6 (2009) 2207[CrossRef].
7. N. Tanaka, J. Yamasaki, S. Fuchi, and Y. Takeda: Microsc. Microanal. 10 (2004) 139.
8. Y. Song, P. J. Simmonds, and M. L. Lee: Appl. Phys. Lett. 97 (2010) 223110[AIP Scitation].
9. S. Makino, T. Miyamoto, T. Kageyama, N. Nishiyama, F. Koyama, and K. Iga: J. Cryst. Growth 221 (2000) 561[CrossRef].
10. R. Suzuki, T. Miyamoto, T. Sengoku, and F. Koyama: J. Cryst. Growth 310 (2008) 5085[CrossRef].
11. S. Miyoshi, H. Yaguchi, K. Onabe, R. Ito, and Y. Shiraki: Appl. Phys. Lett. 63 (1993) 3506[AIP Scitation].
12. Y. Hasegawa, H. Kiyama, Q. K. Xue, and T. Sakurai: Appl. Phys. Lett. 72 (1998) 2265[AIP Scitation].
13. T. Sengoku, R. Suzuki, K. Nemoto, S. Tanabe, F. Koyama, and T. Miyamoto: Jpn. J. Appl. Phys. 48 (2009) 070203[JSAP].