Jpn. J. Appl. Phys. 52 (2013) 08JN14 (2 pages)  |Previous Article| |Next Article|  |Table of Contents|
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Brief Note

Ultrascaled InAlN/GaN High Electron Mobility Transistors with Cutoff Frequency of 400 GHz

Yuanzheng Yue1, Zongyang Hu1, Jia Guo1, Berardi Sensale-Rodriguez1, Guowang Li1, Ronghua Wang1, Faiza Faria1, Bo Song1, Xiang Gao2, Shiping Guo2, Thomas Kosel1, Gregory Snider1, Patrick Fay1, Debdeep Jena1, and Huili Grace Xing1

1Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN 46556, U.S.A.
2IQE RF LLC, Somerset, NJ 08873, U.S.A.

(Received October 15, 2012; accepted November 30, 2012; published online May 31, 2013)

We report on 30-nm-gate-length InAlN/AlN/GaN/SiC high-electron-mobility transistors (HEMTs) with a record current gain cutoff frequency (fT) of 400 GHz. Although the high drain-induced barrier lowering (DIBL) value is indicative of significant short-channel effects, more than seven orders of magnitude in the current on/off ratio was observed. The high fT is a result of minimized parasitic effects and at the expense of a low power gain cutoff frequency (fMAX). The gate length dependence and temperature dependence of fT were also measured.

URL: http://jjap.jsap.jp/link?JJAP/52/08JN14/
DOI: 10.7567/JJAP.52.08JN14


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