Jpn. J. Appl. Phys. 52 (2013) 110101 (5 pages)  |Previous Article| |Next Article|  |Table of Contents|
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Selected Topics in Applied Physics

Silicon–Nitride-Passivated Bottom-Up Single-Electron Transistors

Guillaume Hackenberger1,2, Yasuo Azuma1,2, Shinya Kano1,2, Daisuke Tanaka2,3, Masanori Sakamoto2,4, Toshiharu Teranishi2,4, Yasuhide Ohno2,5, Kenzo Maehashi2,5, Kazuhiko Matsumoto2,5, and Yutaka Majima1,2,6

1Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan
2CREST–Japan Science and Technology Agency (JST), Chiyoda, Tokyo 102-0076, Japan
3Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8571, Japan
4Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011, Japan
5The Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047, Japan
6Department of Printed Electronics Engineering, Sunchon National University, Sunchon, Jeonnam 540-742, Korea

(Received May 13, 2013; revised June 22, 2013; accepted July 17, 2013; published online October 21, 2013)

We report the elaboration of SiNx-passivated chemically assembled single-electron transistors (SETs) by bottom-up processes involving electroless Au plating and the chemisorption of Au nanoparticles. With a Au top-gate electrode, the SiNx-passivated SETs showed a clear Coulomb diamond at 9 K and the top-gate capacitance was 17 times larger than the side-gate capacitance. Moreover, Coulomb oscillation and the Coulomb diamond were observed even at 160 K. Thus, planar technology is applicable to chemically assembled SETs.

DOI: 10.7567/JJAP.52.110101

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