Jpn. J. Appl. Phys. 8 (1969) pp. 1546-1556  |Next Article|  |Table of Contents|
|Full Text PDF (1375K)| |Buy This Article|

Investigation of Electron Transfer in Stressed Many-Valley Semiconductors by Optical Anisotropy

Kuniichi Ohta

(Received May 31, 1969; revised August 23, 1969)

A method is proposed for studying electron transfer between stress-split valleys in stressed many valley semiconductors exhibiting bulk negative differential conductivity in strong electric field. Field induced electron transfer causes carrier redistribution which in turn alter the anisotropy of high frequency dielectric constant. Hence, by observing the optical anisotropy in strong field, we can extract valuable information concerning electron transfer. One convenient method is piezobirefringence. Constructing a simple model for electron transfer in stressed many valley semiconductor, we investigate the behavior of optical anisotropy of stressed many valley semiconductor in strong electric field. It is shown that free carrier electro-optic effect in stressed many-valley semiconductors is expected to be strong so that its observation may be a valuable tool for studying electron transfer. With the advent of recent development of laser spectroscopy, this method may be a very efficient method.

URL: http://jjap.jsap.jp/link?JJAP/8/1546/
DOI: 10.1143/JJAP.8.1546

References | Citing Articles (2)

1. J. E. Smith, Jr.: Appl. Phys. Lett. 12 (1968) 233[AIP Scitation].
2. B. K. Ridley and T. B. Watkins: Proc. Phys. Soc. (GB) 78 (1961) 293; C. Hilsum: Proc. IRE 50 (1962) 185; B. K. Ridley: Proc. Phys. Soc. (GB) 82 (1963) 954; J. B. Gunn: Solid State Commun. 1 (1963) 89; J. B. Gunn: IBM J. of Res. and Dev. 8 (1964) 141; H. Kroemer: Proc. IEEE (correspondence) 52 (1964) 1736.
3. D. E. McCumber and A. G. Chynoweth: IEEE Trans. Electron Dev. ED-13 (1964) 4.
4. R. W. Keyes: Solid State Physics ed. F. Seitz and D. Turnbull (Academic Press, 1960) vol. 11, p. 149.
5. M. L. Cohen and T. K. Bergstresser: Phys. Rev. 141 (1966) 789[APS]; M. Cardona, K. L. Shaklee and F. H. Pollak: Phys. Rev. 145 (1967) 696[APS]; P. J. Lin and L. Kleinman: Phys. Rev. 142 (1966) 478[APS].
6. L. D. Landau and I. M. Lifshitz: Electrodynamics of Continuous Media (Pergamon Press, 1960).
7. K. J. Schmidt-Tiedmann: Proc. Inter. Conf. on Physics of Semiconductors, Exeter (The institute of Physics and the Physical Society, 1962) p. 191.
8. A. Feldmann: Phys. Rev. 150 (1966) 748[APS].
9. M. Born and E. Wolf: Principles of Optics (Pergamon Press, 1964) p. 703.
10. Reference 6) p. 320.
11. Reference 4) p. 167 and references cited therein. W. Schockley and J. Bardeen: Phys. Rev. 77 (1950) 407[APS]; J. Bardeen: Phys. Rev. 75 (1947) 1777[APS]; C. Herring: BSTJ 34 (1955) 237; And also, see the appendix III.
12. W. Sasaki, M. Shibuya and K. Mizuguchi: J. Phys. Soc. Jpn. 13 (1958) 456.
13. E. M. Conwell: Solid State Physics ed. F. Seitz and D. Turnbull Supplement 9 (Academic Press, 1967).
14. M. A. Omar: Phys. Rev. 171 (1968) 925[APS].
15. J. Callaway: Energy Band Theory (Academic Press 1964) p. 233.
16. W. Kohn: Solid State Physics ed. F. Seitz and D. Turnbull (Academic Press 1957) Vol. 5, p. 257.
17. E. O. Kane: J. Phys. Chem Solids 1 (1956) 249[CrossRef].
18. For example, R. Brout: Lectures on the Many-Electron Problem (Interscience Publishers, 1963) p. 37.
19. Reference 15) p. 157.
20. P. Nosieres and D. Pines: Il Nuovo Cimento [X] 9 (1958) 470.
21. Reference 18) p. 151.