Jpn. J. Appl. Phys. 16 (1977) Supplement 16-1 pp. 143-146  |Previous Article| |Next Article|  |Table of Contents|
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8th Conf. (1976 Int.) Solid State Devices, Tokyo, 1976

Phosphorous Buried Emitter I²L for High-Voltage Operating Circuits

Tomoyuki Watanabe, Takahiro Okabe and Minoru Nagata

Phosphorous buried emitter I²L has realized co-operation of I²L circuits and high-voltage operating bipolar circuits on a same LSI chip. Breakdown voltages of npn transistors are much improved, where I²L circuits operate successfully. Phosphorous buried n⁺ layers are introduced to obtain highly up-diffused buried emitters for I²L's, npn transistors exhibit high breakdown voltages of 22 V in BV_CEO and 58 V in BV_CBO. I²L's operate with 0.3 pJ/gate in power-delay-products and 20 ns/gate in minimum delay time.

URL: http://jjap.jsap.jp/link?JJAPS/16S1/143/