Jpn. J. Appl. Phys. 16 (1977) Supplement 16-1 pp. 271-274  |Previous Article| |Next Article|  |Table of Contents|
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8th Conf. (1976 Int.) Solid State Devices, Tokyo, 1976

Double-Junction Photosensitive Devices with High uv Responsivity

W. v. Münch

This paper describes the design and the fabrication of silicon photodetectors with a broad banded response. The devices are featuring shallow (x_j1≈0.1 µm) and deep (x_j2≈5 µm) junctions which contribute to the photoresponse at short and long wavelengths, respectively. The shallow junction is generated by a special diffusion process employing a partially masking SiO₂ layer. The double-junction principle can be extended to light-sensitive FET structures exhibiting an internal gain of about 10⁴.

URL: http://jjap.jsap.jp/link?JJAPS/16S1/271/