Jpn. J. Appl. Phys. 16 (1977) Supplement 16-1 pp. 283-288  |Previous Article| |Next Article|  |Table of Contents|
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8th Conf. (1976 Int.) Solid State Devices, Tokyo, 1976

Hot Carrier-Voltaic Effect in p-n Junction and Its Application to Electron Emitters and Light Detectors

Masayoshi Umeno, Hajime Hattori, Takashi Jimbo, Yasunori Sugito and Yoshifumi Amemiya

When a p-n junction is illuminated by intense light beam in a condition of band gap energy larger than photon energy, electromotive force is induced across the p-n junction with the polarity opposite to ordinary photo-voltaic effect such as a solar cell. Such an anomalous photovoltaic phenomenon has been explained as optically excited hot carrier-voltaic effect by studying the induced voltage across the p-n junction due to hot carriers excited in electric field parallel to the junction plane. As useful applications of the hot carrier-voltaic effect, high efficiency electron emitter and high sensitivity light detector are proposed.

URL: http://jjap.jsap.jp/link?JJAPS/16S1/283/