Jpn. J. Appl. Phys. 17 (1978) Supplement 17-2 pp. 275-277  |Previous Article| |Next Article|  |Table of Contents|
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Int. Conf. X-Ray and XUV Spectroscopy, Sendai, 1978

Angular Dependence of XPS Intensities from GaAs (110) Surface

Masahiro Kudo, Masanori Owari¹, Yoshimasa Nihei, Yohichi Gohshi¹ and Hitoshi Kamada¹

Angular distributions of XPS intensities from (110) plane surfaces of gallium arsenide and germanium single crystals were measured. Along the (001) plane, distributions from these three elements showed similar profiles and good correspondence with Kikuchi-band predictions. However, along the (110) plane, distributions from three elements were different from each other. Only from germanium was good correspondence observed. On the other hand, distributions from gallium and arsenic showed mirror symmetric correspondence with the (001) plane, associated with the crystal structure. From the crystal structure analogy, total gallium arsenide intensity and germanium intensity values were compared, but no clear coincidence was obtained.

URL: http://jjap.jsap.jp/link?JJAPS/17S2/275/