Jpn. J. Appl. Phys. 19 (1980) Supplement 19-1 pp. 161-165  |Previous Article| |Next Article|  |Table of Contents|
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11th Conf. (1979 Int.) Solid State Devices, Tokyo, 1979

Electron-Hole Pair Generation at the Silicon-Sapphire Interface of SOS Devices

K. Lehovec and Shi-Tron Lin

Transient currents associated with inversion charge build-up in n-type silicon-on-sapphire MOSCs are correlated with steady state reverse currents of a gated p-n diode, and are shown to originate by electron-hole pair generation (EHG) at the sapphire interface under the gate rim. The suppression of EHG elsewhere under the gate is attributed to electron concentration build-up associated with lateral electron diffusion. A spike occurs in the transient at incipient inversion under certain conditions, and is ascribed to a lateral drift field caused by an inversion charge density gradient.

URL: http://jjap.jsap.jp/link?JJAPS/19S1/161/