Jpn. J. Appl. Phys. 19 (1980) Supplement 19-1 pp. 253-257  |Previous Article| |Next Article|  |Table of Contents|
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11th Conf. (1979 Int.) Solid State Devices, Tokyo, 1979

(Invited) The Buried Channel CCD: an Inherently Reliable Technology

G. F. Amelio and N. W. Chanoski

This paper discusses the reliability analysis of N-BCCD technology which was performed at our laboratories. In order to obtain a complete reliability profile of N-BCCD devices, tests were conducted at the test die level, finished device level and system level. The analysis shows that N-BCCD devices are more immune to oxide related failures compared to RAMS due to the reduced magnitude and negative electric field. Operating life test results taken on our 64 K-bit CCD memory (F464) indicate excellent integrity to oxide related failure modes in the memory array. An introduction and future outlook discussion is given to provide the reader with a perspective on this technology.

URL: http://jjap.jsap.jp/link?JJAPS/19S1/253/