This paper discusses the reliability analysis of N-BCCD technology which was performed at our laboratories. In order to obtain a complete reliability profile of N-BCCD devices, tests were conducted at the test die level, finished device level and system level. The analysis shows that N-BCCD devices are more immune to oxide related failures compared to RAMS due to the reduced magnitude and negative electric field. Operating life test results taken on our 64 K-bit CCD memory (F464) indicate excellent integrity to oxide related failure modes in the memory array. An introduction and future outlook discussion is given to provide the reader with a perspective on this technology.