Jpn. J. Appl. Phys. 19 (1980) Supplement 19-1 pp. 335-338 |Previous Article| |Next Article| |Table of Contents|
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A micro-tunnel diode load for a normally off, enhancement mode field effect transistor operated at a supply voltage about equal to the valley-current voltage of the tunnel diode provides the basic building block for a compact dc coupled high speed VLSI logic1) for which the name TDFL is suggested. The pertinent unique properties of the micro-tunnel diode are: a low current when the supply voltage extends across the diode, hence low power dissipation; a large pull-up current during the major portion of the rise transient of the inverter, hence short rise time; and an extremely small area negligible vs the switching transistor area. The speed advantage of the tunnel diode load over conventional loads becomes more pronounced at higher fan-out ratios eliminating the need for buffers in many cases. The negative resistance characteristic of the tunnel diode also enables the design of a compact static memory element.
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