Jpn. J. Appl. Phys. 19 (1980) Supplement 19-1 pp. 339-343  |Previous Article| |Next Article|  |Table of Contents|
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11th Conf. (1979 Int.) Solid State Devices, Tokyo, 1979

Power GaAs MESFETs with a Graded Recess Structure

Asamitsu Higashisaka, Takashi Furutsuka, Yoichi Aono, Yoichiro Takayama and Fumio Hasegawa

A new recess structure called a graded recess structure was developed to improve the performance of power GaAs MESFETs. The investigation on the light emission from the device confirmed that the anomalous electric field outside the gate region was eliminated by the graded recess structure. Due to the elimination of the anomalous field, the drain and the gate breakdown voltages were improved. The linear gain and the output power of the devices were resultantly improved by 1–2dB, and the output powers of 15 W (4 dB gain) and 4.3 W (3 dB gain) were obtained at 6 and 11 GHz band, respectively.

URL: http://jjap.jsap.jp/link?JJAPS/19S1/339/