Jpn. J. Appl. Phys. 19 (1980) Supplement 19-1 pp. 473-477  |Previous Article| |Next Article|  |Table of Contents|
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11th Conf. (1979 Int.) Solid State Devices, Tokyo, 1979

A New Heat Treatment Technique for No Thermal Conversion of Semi-Insulating GaAs Wafers

Toshio Tanaka, Saburo Takamiya, Makoto Ishii and Wataru Susaki

Cr-doped semi-insulating GaAs wafers usually suffer thermal conversion by heat treatment at high temperature prior to epitaxial growth. In this paper, the influence of a small amount of AsCl₃ gas, added into H₂ atmosphere, on the thermal conversion of the semi-insulating GaAs wafers have been investigated. Resistivity, surface morphology, and photoluminescence spectra of the wafers before and after a heat treatment at 800°C for 1.5 hours, were examined. It is found that no thermal conversion occurs by controlling an AsCl₃ concentration in the hydrogen-ambient gas flow at 2.8×10^-4 mol%.

URL: http://jjap.jsap.jp/link?JJAPS/19S1/473/