Jpn. J. Appl. Phys. 19 (1980) Supplement 19-1 pp. 479-482  |Previous Article| |Next Article|  |Table of Contents|
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11th Conf. (1979 Int.) Solid State Devices, Tokyo, 1979

Characterization of In_xGa_1-xAs_1-yP_y Epitaxial Layers and Relation to Lattice Matching

Akiyoshi Tamura, Koji Oka, Masataka Inoue, Junji Shirafuji and Yoshio Inuishi

The minority carrier (electron) diffusion length in Zn-doped p-In_0.80Ga_0.20As_0.44P_0.56 epitaxial layers (p∼10¹⁸ cm^-3) ranges from 1.7 to 0.76 µm, almost independent of the magnitude of the lattice mismatch, in the mismatch range ±0.2%. It is found that the minority carrier (electron) diffusion length was determined mainly by point-defect centers or by direct radiative recombination. Two electron traps which locate at 0.60 and 0.67 eV below the conduction band are observed by DLTS in undoped n-In_0.77Ga_0.23As_0.35P_0.65 layers (n=1.7×10¹⁵∼5.1×10¹⁶ cm^-3). The density of the 0.67 eV trap is, remarkably dependent on the lattice mismatch, 2.4×10¹³ cm^-3 at the matched condition and 9.7×10¹⁵ cm^-3 at the mismatch of +0.21%.

URL: http://jjap.jsap.jp/link?JJAPS/19S1/479/