Jpn. J. Appl. Phys. 19 (1980) Supplement 19-1 pp. 567-571  |Previous Article| |Next Article|  |Table of Contents|
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11th Conf. (1979 Int.) Solid State Devices, Tokyo, 1979

A Comparative Study of Cu2S–ZnxCd1-xS and Cu2S–CdS Thin Film Solar Cells Prepared by Solid State Reaction

M. S. Tomar and F. J. Garcia

Depto. Fisica, Universidad Simon Bolivar, Caracas-108- Venezuela

We report here all polycrystalline thin film solar cells of Cu2S–ZnxCd1-xS and Cu2S–CdS prepared by solid state reaction. The efficiencies in the range of 4 to 5% have been obtained without antireflection coating. The improvement in open circuit voltage is observed in Cu2S–ZnxCd1-xS cell with little sacrifice in short circuit current. A comparison is also made with the solar cell ZnxCd1-xS–Cu2S prepared by spray pyrolysis and the electrical conversion efficiency about 1.0% is obtained.

URL: http://jjap.jsap.jp/link?JJAPS/19S1/567/


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