Jpn. J. Appl. Phys. 19 (1980) Supplement 19-3 pp. 33-41  |Previous Article| |Next Article|  |Table of Contents|
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4th Int. Conf. Ternary and Multinary Compounds, Tokyo, 1980

Preparation and Some Properties of CuInSe₂ on ZnSe Heterojunction Grown by LPE

Hiroshi Takenoshita, Tanehiro Nakau and Itiro Nakao

CuInSe₂ has been grown on ZnSe by LPE from the Bi solution. The value of lattice mismatch is 2.06%. The reflection electron diffraction pattern showed an epitaxial growth. Optimum growth condition was the following: maximum temperature of 600°C, cooling rate of 0.5°C/min, thickness of the over-growth layer of 6 µm and thickness of mixed crystal layer of 4.5 µm. The flatness of overgrowth surface was dependent on the substrate orientation and the quality was in order of (111)_Se, (100), (111)_zn and (110). Hall measurements on over-growth layer were carried out after the heat-treatment in Se and Zn atmosphere for 10 minutes at 600°C. The p·CuInSe₂–n·ZnSe and n·CuInSe₂–n·ZnSe heterodiodes were measured for their I–V, C–V characteristics and photoresponse. Especially, the n-n heterodiode showed a high photosensitivity.

URL: http://jjap.jsap.jp/link?JJAPS/19S3/33/