Jpn. J. Appl. Phys. 21 (1982) Supplement 21-2 pp. 121-124  |Previous Article| |Next Article|  |Table of Contents|
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3rd Photovoltaic Science and Engineering Conf. Japan, Kyoto, 1982

A Comparison of Spray-Deposited ITO/n-Si and SnO₂/n-Si Solar Cells

Takao Nagatomo, Yoshio Inagaki, Yuji Amano and Osamu Omoto

The diode and photovoltaic properties of spray-deposited ITO/n-Si solar cells are very similar to those of SnO₂/n-Si devices. These cells have relatively high conversion efficiencies of 11∼13%. The cell performances are affected by the work functions (or electron affinities) of ITO and SnO₂ films, and by the interface states. The work functions (or electron affinities) and band gaps of ITO and SnO₂ films vary by the preparation techniques. Spray-deposited ITO/n-Si and SnO₂/n-Si solar cells do not operate at minority-carrier diodes.

URL: http://jjap.jsap.jp/link?JJAPS/21S2/121/