Jpn. J. Appl. Phys. 21 (1982) Supplement 21-2 pp. 27-31  |Previous Article| |Next Article|  |Table of Contents|
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3rd Photovoltaic Science and Engineering Conf. Japan, Kyoto, 1982

Comparison of High Energy Proton Radiation Damages on AlGaAs/GaAs and Si Solar Cells

Susumu Yoshida, Kotaro Mitsui, Takao Oda and Yoshinory Yukimoto

We have developed high performance AlGaAs/GaAs solar cells with a conversion efficiency in excess of 18% and high resistance to radiation damage by high energy protons.
Results on radiation hardness of AlGaAs/GaAs solar cells for 5, 10, 15, and 52 MeV proton with fluences up to 5×10¹² p/cm² are presented.
The AlGaAs/GaAs solar cells are superior to Si solar cells for radiation damage of high energy proton capable of penetrating a coverglass.

URL: http://jjap.jsap.jp/link?JJAPS/21S2/27/