Jpn. J. Appl. Phys. 21 (1982) Supplement 21-2 pp. 27-31 |Previous Article| |Next Article| |Table of Contents|
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3rd Photovoltaic Science and Engineering Conf. Japan, Kyoto, 1982
Comparison of High Energy Proton Radiation Damages on AlGaAs/GaAs and Si Solar Cells
Lsi Research and Development Laboratory, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami City, Hyogo 664
We have developed high performance AlGaAs/GaAs solar cells with a conversion efficiency in excess of 18% and high resistance to radiation damage by high energy protons.
Results on radiation hardness of AlGaAs/GaAs solar cells for 5, 10, 15, and 52 MeV proton with fluences up to 5×1012 p/cm2 are presented.
The AlGaAs/GaAs solar cells are superior to Si solar cells for radiation damage of high energy proton capable of penetrating a coverglass.