Jpn. J. Appl. Phys. 22 (1983) Supplement 22-1 pp. 205-208 |Previous Article| |Next Article| |Table of Contents|
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14th Conf. (1982 Int.) Solid State Devices, Tokyo, 1982
The Use of Selective Annealing for Growing Very Large Grains in Silicon on Insulator Films
CNET, B.P. 42, 38240 Meylan, France
The selective annealing technique (laser annealing under patterned antireflecting coating) has been successfully applied to the growth of very large (20 µm × 3000 µm) silicon single crystals. The grain boundary location is controlled by a conventional lithography step, and the grains obtained have a nearly perfect rectangular shape.