Jpn. J. Appl. Phys. 22 (1983) Supplement 22-1 pp. 209-209  |Previous Article| |Next Article|  |Table of Contents|
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14th Conf. (1982 Int.) Solid State Devices, Tokyo, 1982

Characterization of Laser-Induced Epitaxial Si Crystal by Evaluating MOSFET's Fabricated in Grown Layers

Masanobu Miyao, Makoto Ohkura, Iwao Takemoto, Masakazu Ichikawa, Masao Tamura and Takashi Tokuyama

Electrical and crystalline properties of seeded-lateral epitaxial Si layers on SiO₂ obtained by cw scanning Ar laser irradiation are evaluated as a function of distance from the seeding area. Field effect electron mobility of 600 cm²/V·s, comparable to that of bulk Si, is obtained for almost all grown layers. However, electrical properties near SiO₂ edge are found to be somewhat poor. This is related to the existence of dislocations and residual stress discontinuities at the SiO₂ edge. Useful application of the multi-region in epitaxial layer for 3-dimensional device structures is also proposed.

URL: http://jjap.jsap.jp/link?JJAPS/22S1/209/