Jpn. J. Appl. Phys. 22 (1983) Supplement 22-1 pp. 239-242  |Previous Article| |Next Article|  |Table of Contents|
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14th Conf. (1982 Int.) Solid State Devices, Tokyo, 1982

InGaAsP/InP Laser Diodes Mounted on Semi-Insulating SiC Ceramics

Shinji Tsuji¹, Ken-ichi Mizuishi¹, Yoshinori Nakayama¹, Makoto Shimaoka² and Motohisa Hirao¹

Semi-insulating SiC ceramics is proposed as a new material for InGaAsP/InP laser diode heatsinks. It is featured by high theraml conductivity (2.7 W/cm deg) and high electrical resistivity (4×10¹³ Ohm cm). The expansion coefficient of the material is 3.7×10^-6 deg^-1, which is very close to that of InP. The electrical and thermal characteristics, and reliability of InGaAsP/InP buried heterostructure (BH) lasers mounted on SiC heatsinks are also discussed. Stable modulated operation of up to 1 GHz, a maximum temperature for cw lasing of up to 100°C, and an expected median lifetime of 3×10⁴ hrs at 60°C have been demonstrated for these lasers.

URL: http://jjap.jsap.jp/link?JJAPS/22S1/239/